Deep ultraviolet LED device with visible light wave band and preparation method of deep ultraviolet LED device

Abstract

The invention discloses a deep ultraviolet LED device with a visible light waveband and a preparation method of the deep ultraviolet LED device. The deep ultraviolet LED device with the visible lightwave band is sequentially provided with a sapphire substrate, an AlN intrinsic layer, an n-type AlGaN layer, a current expansion layer, a deep ultraviolet band quantum well active layer, a visible band quantum well active layer, an electron blocking layer, a p-type AlGaN injection layer, a p-type GaN contact layer, a DBR layer, a p electrode and an n electrode from bottom to top. According to theinvention, a deep ultraviolet band quantum well based on an AlGaN material and a visible light band quantum well based on an InGaN material are integrated in an epitaxial structure in a monolithic manner; therefore, the single device can emit light in both the deep ultraviolet band and the visible light band, the manufacturing process of a double-color lamp bead device is simplified, and the manufacturing cost of the double-color lamp bead device is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a deep ultraviolet LED device with visible light band and a preparation method thereof. Background technique [0002] At present, group III nitrides, as outstanding representatives of wide bandgap semiconductor materials, have realized high-efficiency blue-green light-emitting diodes (light-emitting diodes, referred to as LEDs), lasers and other solid-state light source devices. and other applications have achieved great success. In the past ten years, people expect to apply this high-efficiency luminescent material to the ultraviolet band to meet the increasing demand for ultraviolet light sources. According to its biological effects, the ultraviolet band can usually be divided into: long-wave ultraviolet (abbreviated as UVA, wavelength range 320-400nm), medium-wave ultraviolet (abbreviated as UVB, wavelength range 280-320nm), short-wave ultraviolet (abbreviated as ...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a deep ultraviolet LED device with visible light band and its preparation method, which is used to solve the problem that deep ultraviolet devices in the prior art cannot cover the visible light band at the same time, which makes it difficult to identify when working

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