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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, used in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc. Fewer interface defects, excellent carrier transport properties, and improved stability

Inactive Publication Date: 2020-06-02
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, and provide a quantum dot light-emitting diode and a preparation method thereof, aiming at solving the problem of poor film bonding between the quantum dot light-emitting layer and the electron transport layer in the existing device, and crystallization. Grid mismatch, which affects the technical problems of the device's luminous performance and service life

Method used

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  • Quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0021] Correspondingly, the preparation method of the above-mentioned quantum dot light-emitting diode includes the following steps:

[0022] S01; Provide a substrate and prepare a solution containing dopamine;

[0023] S02: depositing the solution on the substrate, and then annealing to obtain the first layer.

[0024] In the quantum dot light-emitting diode provided by the embodiment of the present invention, a solution containing dopamine is deposited on the substrate and then heated to obtain a layer of uniform and dense, strong adhesive, stable and uniform, less interface defects, and excellent carrier transport performance. One layer, the final device has good luminous efficiency and service life.

[0025] Further, in the above step S01, the substrate is the substrate for preparing quantum dot light-emitting diodes, if the substrate is provided with a quantum dot light-emitting layer, the first layer is directly prepared on the quantum dot layer; if the substrate is provi...

Embodiment 1

[0054] A quantum dot light emitting diode, its structure is as figure 1 As shown, the fabrication process of the device is as follows:

[0055] Firstly, dopamine was dissolved in absolute ethanol to adjust the concentration to 15 mg / mL, and then 0.02 mol / L sodium 3-morpholine propanesulfonate was added to the solution to prepare a dopamine solution. Then prepare the quantum dot light-emitting diode according to the following steps:

[0056] Step S1: Spin-coat a PEDOT:PSS hole injection layer on the ITO conductive glass at a speed of 4500 rpm, and then heat at 160° C. for 10 min.

[0057] Step S2: Spin-coat a layer of TFB hole transport layer on the PEDOT:PSS hole injection layer at a speed of 10 mg / mL and 2500 rpm.

[0058] Step S3: Spin-coat a CdSe@ZnS quantum dot light-emitting layer on the TFB hole transport layer at a speed of 18 mg / mL and 3000 rpm.

[0059] Step S4: spin-coat the above dopamine solution on the CdSe@ZnS quantum dot light-emitting layer at a speed of 300...

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Abstract

The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprisesan anode, a cathode and a quantum dot light-emitting layer arranged between the anode and the cathode, an electron transport layer is arranged between the quantum dot light-emitting layer and the cathode, and a first layer containing dopamine is arranged between the quantum dot light-emitting layer and the electron transport layer. The quantum dot light-emitting diode comprises a first layer which is uniform, compact, high in adhesiveness, stable, uniform, few in interface defects and excellent in carrier transport performance, and a finally obtained device has good light-emitting efficiencyand long service life.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is an emerging display device. Its structure is similar to that of organic light-emitting diode (OLED). It mainly consists of light-emitting layer, electrodes, and various functions. The layers are assembled into a sandwich structure. Compared with traditional light-emitting diodes and OLEDs, the main feature of QLED is that its light-emitting materials use inorganic semiconductor quantum dots with better performance and more stable materials, which have unique quantum size effects, macroscopic quantum tunneling effects, and surface effects. It exhibits excellent physical properties, especially excellent optical properties, such as narrow emission spectrum, high light color purity, high luminous efficiency, adjustable luminous co...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K85/00H10K50/115H10K71/00
Inventor 梁柱荣曹蔚然钱磊
Owner TCL CORPORATION
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