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Polishing solution for chemico-mechanical polishing of silicon carbide

A chemical mechanical and polishing fluid technology, applied to polishing compositions containing abrasives, etc., can solve problems such as increasing equipment corrosion, affecting surface roughness, and increasing silicon carbide surface corrosion

Inactive Publication Date: 2020-06-05
昂士特科技(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These additives contain a number of different inorganic or organic acids and bases, and it seems difficult to see that they can significantly increase the removal rate of silicon carbide
At present, in addition to using hard abrasives such as diamond powder, the polishing of silicon carbide is generally carried out in acidic medium, and acidic medium increases the corrosion of the surface of silicon carbide, which affects the surface roughness, and also increases the corrosion of equipment.
Therefore, it remains a challenge to develop a polishing fluid that can effectively achieve good removal rate and roughness in alkaline solution

Method used

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  • Polishing solution for chemico-mechanical polishing of silicon carbide
  • Polishing solution for chemico-mechanical polishing of silicon carbide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] In this example, seven biological buffers were selected. They have different pKa, covering the pH range of 6-11. These biological buffers are: MES (pKa=6.1), TEA (pKa=7.8), TAPS (pKa=8.4), Bicine (pKa=8.3), AMP (pKa=9.7), CAPSO (pKa=9.6) , and CAPS (pKa=10.4). Polishing solutions containing these biological buffers were prepared under the same conditions. The SiO that present embodiment selects for use Abrasive is particle diameter 100 nanometers, concentration 5%, in described solution, add the different damping solution of 0.25% (percentage by weight), finally add 3%H 2 o 2 , and then adjust the pH of the solution. Wherein, the pH values ​​of the solutions are: MES: 6.5; TEA: 8.0; TAPS: 9.0; Bicine: 9.1; AMP: 10.0; CAPSO: 10.0; The polishing conditions are as follows: the rotational speed of the polishing disc: 60 RPM, the liquid feeding speed: 30 ml / min, and the pressure 8.5 psi.

[0033] Polishing results are shown in figure 1 and figure 2 . Depend on fig...

Embodiment 2

[0035] In this embodiment, the two best-performing biological buffers Bicine and CAPS were selected for further testing. The SiO used in this embodiment 2 Abrasives are particle diameter 120 nanometers, weight percent concentration 10%, add respectively the Bicine and CAPS of 0.5% (weight percent) in described solution, finally add 6%H 2 o 2 , and then adjust the pH value of the solution to 9.1 (Bicine) and 10.5 (CAPS) respectively. The polishing conditions are as follows: the rotational speed of the polishing disc: 60 RPM, the liquid feeding speed: 30 ml / min, and the pressure 8.5 psi.

[0036] The conditions of this example produced very different results from Example One. The removal rate of the polishing solution added with Bicine was significantly reduced to MRR=0.077μm / h, while the polishing solution containing CAPS produced a high removal rate of MRR=0.237μm / h. The average roughness Ra of the polished silicon carbide surface is between 0.2-0.3nm as measured by an ato...

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Abstract

The invention discloses a polishing solution for chemico-mechanical polishing of silicon carbide. The polishing solution comprises an abrasive, an oxidizing agent, a biological buffer solution, a pH regulator and an aqueous medium, wherein the abrasive is one or a mixture of silica sol (SiO2) and alumina sol (Al2O3), the weight percentage concentration of the abrasive is 1%-40%, the weight percentage concentration of the biological buffer solution is 0.05%-5%, and the weight percentage concentration of the oxidizing agent is 0.2%-10%; the pH value of the polishing solution is 7-11. The technical scheme of the invention aims to provide the polishing solution capable of effectively achieving excellent removal rate and roughness in an alkaline solution.

Description

technical field [0001] The invention relates to the technical field of semiconductor material polishing, in particular to a polishing liquid for chemical mechanical polishing of silicon carbide. Background technique [0002] The third-generation semiconductors represented by silicon carbide (SiC) and gallium nitride (GaN) have received extensive attention in recent years. Silicon carbide is used in the semiconductor industry and optical devices due to its high hardness, excellent thermal conductivity, anti-friction ability, and large band gap. However, its wide application is based on its excellent surface flatness and smoothness, and its superhardness and outstanding anti-friction performance make silicon carbide surface treatment a difficult problem. At present, the most effective surface treatment method of silicon carbide is chemical mechanical polishing (CMP) technology, which can reduce the surface roughness of silicon carbide wafers to less than 0.2 nanometers, thus ...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 王家雄
Owner 昂士特科技(深圳)有限公司
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