Organic photodiode, X-ray detector and preparation method thereof
A photodiode and X-ray technology, applied in the field of detection, can solve the problems of slow switching speed of TFT and high manufacturing cost of X-ray detectors, and achieve the effects of improving switching rate, sensitivity and external quantum efficiency.
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Embodiment 1
[0047] refer to figure 1 , the present embodiment provides an organic photodiode, which includes a first conductive transport layer 12, a P3HT:PCBM active layer 13, a second conductive transport layer 14, and a transparent top electrode layer stacked in sequence from bottom to top 15.
[0048] The organic photodiode of this embodiment can be produced with low-cost equipment, thereby simplifying the preparation process and saving costs; in the organic photodiode, the bandgap of the P3HT:PCBM active layer 13 is adjustable, Therefore, the external quantum efficiency of the organic photodiode can be improved, thereby improving the sensitivity of the X-ray detector.
[0049] As an example, the first conductive transport layer 12 includes an electron transport layer, and the second conductive transport layer 14 includes a hole transport layer; or the first conductive transport layer 12 includes a hole transport layer, and the second conductive transport layer 14 includes a hole tra...
Embodiment 2
[0072] refer to Figure 4 This embodiment provides an X-ray detector, which differs from Embodiment 1 mainly in that the thin-film transistor of the X-ray detector adopts a top-gate organic thin-film transistor, so as to expand the application range of the X-ray detector.
[0073] Specifically, the X-ray detector includes a top gate organic thin film transistor, an organic photodiode located on the top gate organic thin film transistor, a passivation layer 31' and a scintillator layer 41'. Wherein, the top gate organic thin film transistor includes a substrate 21', a source metal electrode 25', a drain metal electrode 26', a channel layer 24', a gate insulating layer 23', a gate metal electrode 22' and passivation protective layer 27'; the organic photodiode includes a first conductive transport layer 12', a P3HT:PCBM active layer 13', a second conductive transport layer 14' and a transparent top electrode layer 15'. Wherein, the structure, material and manufacturing method o...
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