Reverse power reduction method and plasma power device using same

Abstract

A reverse power reduction method is a method for reducing reverse power reflected from a plasma load to a high-frequency power amplifier unit, and comprises: an output frequency gradient determinationstep: a controller determines a sign of an output frequency gradient output from the high-frequency power amplifier unit; a reverse power gradient determination step: the controller determines the sign of the gradient of the reverse power reflected from a plasma load to the high-frequency power amplifier; a frequency change amount increase / decrease determination step: the controller determines the increase / decrease of the frequency change amount on the basis of the combination of the sign of the output frequency gradient and the sign of the reverse power gradient; an updating step: the controller updates the output frequency using the frequency change amount; and an output frequency changing step: if the reflection coefficient is greater than a prescribed reflection reference value and the frequency change amount is less than a prescribed fluctuation range set value, the controller changes the output frequency in order to deviate from the hump.

Description

technical field [0001] The present invention relates to a plasma power device, and more particularly, to a method for reducing reverse power in a plasma power device. Background technique [0002] Plasma etching is often used in semiconductor manufacturing processes. In plasma etching, ions are accelerated by an electric field in order to etch the surface exposed on the substrate. The electric field is generated according to a high-frequency signal generated by a high-frequency generator of a high-frequency power system. The high frequency signal generated by the high frequency generator needs to be precisely controlled in such a way as to efficiently perform plasma etching. [0003] The high frequency power system may include a high frequency generator, an impedance matcher (Impedance matcher) and a plasma chamber. In order to manufacture various components such as multiple integrated circuits (ICs), solar panels, compact disks (CDs) and / or DVDs, high frequency signals a...

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Problems solved by technology

Also, when achieving the target frequency, it becomes more difficult to achieve processor reproducibility and semi-property

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