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Information processing method and system applied to GaN power device applied to quick charging

An information processing method and power device technology, applied in the field of GaN power devices, can solve the problems of cumbersome signal parameters and insufficient precision.

Pending Publication Date: 2020-06-19
辽宁百思特达半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] To sum up, the problems existing in the existing technology are: it is cumbersome to extract the device signal parameters of the existing GaN power devices used in fast charging; at the same time, the traditional device methods are based on the small signal model or large signal model parameters of a single GaN device analysis method, the accuracy is insufficient

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  • Information processing method and system applied to GaN power device applied to quick charging
  • Information processing method and system applied to GaN power device applied to quick charging
  • Information processing method and system applied to GaN power device applied to quick charging

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Embodiment 1

[0085] The information processing method applied to the fast charging GaN power device provided by the embodiment of the present invention is as follows: figure 1 As shown, as a preferred embodiment, the method for extracting GaN power device signal parameters through the extraction program provided by the embodiment of the present invention includes:

[0086] (1) Using the finite element thermal simulation method through the extraction program, extract the relational expression of the nonlinear thermal resistance of the GaNHEMT device with the power consumption and size of the device.

[0087] (2) Using the S-parameter test data under cold pinch-off bias conditions, extract the parasitic parameter values ​​of the GaNHEMT device at room temperature.

[0088] (3) Use the test data of device pulse I-V under different ambient temperatures to extract the parasitic resistance R s and R d The relational expression with temperature, combined with the results of steps (1) and (2), g...

Embodiment 2

[0099] The information processing method applied to the fast charging GaN power device provided by the embodiment of the present invention is as follows: figure 1 As shown, as a preferred embodiment, the method for constructing a GaN power device signal model through a data modeling program provided by an embodiment of the present invention includes:

[0100] 1) Establish a GaN power device small-signal equivalent circuit model through a data modeling program, and extract small-signal model parameters;

[0101] 2) Optimize the small signal model parameters according to the measured multi-bias scattering parameters;

[0102] 3) Establishing a large-signal equivalent circuit model of the GaN power device, extracting large-signal model parameters, the large-signal model parameters including nonlinear current source model parameters and nonlinear capacitance model parameters;

[0103] 4) Targeting the measured multi-bias scattering parameters and large-signal characteristic param...

Embodiment 3

[0115] The information processing method applied to the fast charging GaN power device provided by the embodiment of the present invention is as follows: figure 1 As shown, as a preferred embodiment, the method for predicting the lifetime of a GaN power device through a prediction program according to the GaN power device signal model and power consumption data provided by the embodiment of the present invention includes:

[0116] a) Obtain the signal model, power consumption data, equal voltage discharge, charging time interval and battery capacity data of GaN power devices, calculate the weight of data layer fusion and fuse the data.

[0117] b) Train and estimate the ARIMA model parameters and test the ARIMA model, and use the fused data in step a) to predict the RUL and the SOH of the next period through the ARIMA model.

[0118] c) Input the GaN power device status observation data obtained online in real time, repeat steps a) to step b), update the ARIMA prediction model...

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Abstract

The invention belongs to the technical field of GaN power device information processing, and discloses an information processing method and system for a GaN power device applied to quick charging. Theinformation processing system of the GaN power device comprises a power detection module, a signal parameter extraction module, a signal modeling module, a main control module, a power consumption calculation module, a service life prediction module, a terminal module, a data storage module, a power supply module and a display module. The method comprises the following steps: firstly, establishing a GaN power device small signal equivalent circuit model through a signal modeling module; a GaN power device large signal equivalent circuit model is established, and finally a scattering parameterand large signal characteristic statistical model of a GaN process line is established according to model parameter statistical characteristics, so that accurate modeling of small signal and large signal characteristics of a certain specific process line is realized, and the accuracy of the model is improved. Devices of different sizes and intrinsic parameters of the devices under various bias conditions can be extracted more conveniently and efficiently.

Description

technical field [0001] The invention belongs to the technical field of GaN power devices, and in particular relates to an information processing method and system for fast charging GaN power devices. Background technique [0002] Gallium nitride is currently one of the fastest power switching devices in the world, and it can maintain a high level of efficiency in the case of high-speed switching. It can be applied to smaller transformers, allowing chargers to effectively reduce the size of products. For example, the introduction of the USB PD fast charging reference design enables the current common 45W adapter design to adopt a 30W or smaller form factor design. However, it is cumbersome to extract device signal parameters from existing GaN power devices used in fast charging; at the same time, traditional device methods are based on the analysis of small-signal model or large-signal model parameters of a single GaN device, which is insufficient in accuracy. [0003] To su...

Claims

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Application Information

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IPC IPC(8): G06F30/23G06F30/39G06F119/08
Inventor 尹宝堂刘军董雱石桂名
Owner 辽宁百思特达半导体科技有限公司
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