Semiconductor light emitting element having electron blocking capability

Abstract

The invention relates to a semiconductor light emitting element having an electron blocking capability, which comprises a substrate layer, a buffer layer located on the substrate layer, an N-type semiconductor layer located on the buffer layer, an N-type doped layer located on the N-type semiconductor layer, a quantum well light-emitting layer located on the N-type doped layer, an electron blocking layer located on the quantum well light-emitting layer, a P-type doped layer located on the electron blocking layer and a P-type semiconductor layer located on the P-type doped layer, wherein the electron blocking layer comprises a first electron blocking layer, a second electron blocking layer and a third electron blocking layer which are sequentially laminated on the quantum well light-emitting layer. According to the invention, the first electron blocking layer, the second electron blocking layer and the third electron blocking layer are sequentially laminated on the quantum well light-emitting layer, so that excessive electrons can be effectively prevented from jumping to the P-type semiconductor layer from the quantum well light-emitting layer, and the light-emitting efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of light-emitting elements, in particular to a semiconductor light-emitting element with electron blocking capability. Background technique [0002] A light emitting diode (LED, Light Emitting Diode) is a compound semiconductor light emitting element that converts electrical energy into light energy. Here, the composition ratio of compound semiconductors can be adjusted to realize various colors. Recently, low voltage / high power driving devices have become popular in the LED backlight unit market. [0003] At present, a light-emitting diode generally includes a substrate layer, a buffer layer, an N-type semiconductor layer, a multi-quantum well light-emitting layer, and a P-type semiconductor layer. Among them, the N-type semiconductor layer is used to provide electrons; the P-type semiconductor layer is used to provide holes. When a current passes through, the electrons provided by the N-type semiconducto...

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Problems solved by technology

[0004] However, because the mobility of electrons is much higher than that of holes, the electrons generated by the N-type semiconductor layer can quickly enter the quantum well light-emitting layer, and the excess electrons will jump from the quantum well light-emitting layer to the P-type semiconductor layer, so that the electrons Non-radiative recombination with holes affects the luminous efficiency of light-emitting diodes

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