GaAs/AIAs/AIAs Bragg reflector laser

Abstract

The invention relates to a GaAs/AIAs/AIAs Bragg reflector laser. The structure of the GaAs/AIAs/AIAs Bragg reflector laser sequentially comprises a substrate layer, a first distributed Bragg reflectorlayer, an n type Ge semiconductor layer, an n type Ge doped layer, a quantum well light-emitting layer, electron barrier layers, a p type Ge doped layer, a p type Ge semiconductor layer and a seconddistributed Bragg reflector layer that are arranged successively from bottom to top. According to the laser, the GaAs/AIAs superlattice material is used as a high-refractive-index material layer, andthe AIAs material is used as a low-refractive-index material layer; the formed distributed Bragg reflector replaces a traditional FB resonant cavity, so that the processing is simple, the monochromaticity of laser is improved; the process difficulty can be reduced, and the distributed Bragg reflector is not easy to fall off; and the first electron barrier layer and the second electron barrier layer are sequentially stacked on the quantum well light-emitting layer, so that excessive electrons can be effectively prevented from jumping from the quantum well light-emitting layer to the p type Ge semiconductor layer, and the light-emitting efficiency of the laser is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a GaAs / AIAs / AIAs Bragg reflector laser. Background technique [0002] Semiconductor lasers have outstanding features such as high energy conversion efficiency, easy high-speed current modulation, ultra-miniaturization, simple structure, and long service life, and have been considered in the application of optoelectronic integration. With the improvement of epitaxial growth technology of germanium on silicon, germanium semiconductor materials have become a research hotspot, especially the preparation of lasers with germanium materials as on-chip light sources is the frontier of research. [0003] However, when the Germanium material-based laser uses a Fabry Perot resonator, due to its large wavelength and the number of coating layers of the high-reflection film, the process is difficult and easy to fall off. [0004] In addition, because the mobility of electro...

AI Technical Summary

Problems solved by technology

[0003] However, when the germanium material-based laser uses a Fabry Perot resonator, due to its large wavelength and the number of coating layers of the high-reflection film, the process is difficult and easy to fall off

[0004] In addition, because the mobility of electrons in semiconductor devices is much higher than that of holes, the electrons generated in the n-type semiconductor layer can quickly enter the quantum well light-emitting layer, and the excess electrons will jump from the quantum well light-emitting layer to the p-type semiconductor layer. As a result, non-radiative recombination of electrons and holes occurs, which affects the luminous efficiency of light-emitting diodes.

Images