Etching solution and preparation method thereof

Abstract

The invention provides an etching solution and a preparation method thereof. The etching solution comprises, by mass, 1-20% of hydrogen peroxide, 0.01-5% of an inorganic acid, 0.01-5% of a hydrogen peroxide stabilizer, 1-10% of a pH regulator, 1-10% of a complexing agent, 0.01-2% of a metal corrosion inhibitor, and the balance of water, wherein the inorganic acid at least comprises a fluorine compound. The etching solution can realize etching of source and drain metal electrodes and a metal oxide film layer at the same time, the use number of photomasks is reduced under the condition that theperformance of a semiconductor device is not influenced, the material cost is reduced, and the technological process is simplified.

Description

technical field [0001] The invention relates to an etching solution and a preparation method thereof, and belongs to the technical field of etching. Background technique [0002] With the flat panel display industry becoming increasingly saturated, various panel companies focus on developing new processes to reduce production costs, such as shortening the panel production process and reducing raw material consumption. The TFT process with the highest cost has become a key node for enterprises to reduce costs and increase efficiency. The most significant measure is to reduce the number of MASKs used. [0003] Taking metal oxide-TFT as an example, when etching the source and drain electrodes, different etching solutions are used to etch the SD layer and the metal oxide film layer step by step, which undoubtedly increases the number of MASKs used, and it is difficult to achieve cost reduction. reduce. If only one of the etching solutions is used to etch the SD layer and the m...

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Problems solved by technology

[0003] Taking metal oxide-TFT as an example, when etching the source and drain electrodes, different etching solutions are selected to etch the SD layer and the metal oxide film layer step by step, which undoubtedly increases the number of MASKs used, and it is difficult to achieve cost reduction. reduce

If only one of the etching solutions is used to etch the SD layer and the metal oxide film layer synchronously, for example, the SD layer and the metal oxide film layer are etched synchronously using the etching solution for etching the SD layer, then it is difficult to ensure Effective etching of the metal oxide film layer will not only have a metal oxide film layer residue, but also make the etching profile uncontrollable, which will affect the performance of the semiconductor device

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