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Etching solution for copper/ molybdenum (niobium)/ indium gallium zinc oxide (IGZO) film, as well as preparation method and application thereof

A technology of etching solution and film layer, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of high price and affecting the profit level of enterprises

Pending Publication Date: 2020-10-23
江苏和达电子科技有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, in order to better control the etching direction and etching rate and obtain a better wiring shape, the existing hydrogen peroxide-based etching solutions often add azole corrosion inhibitors, such as 5-aminotetrazole, 3-aminotriazol azoles, etc., but the price of such azole corrosion inhibitors is quite high (the unit price is as high as 800-900 yuan per kilogram), which affects the profit level of enterprises

Method used

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  • Etching solution for copper/ molybdenum (niobium)/ indium gallium zinc oxide (IGZO) film, as well as preparation method and application thereof
  • Etching solution for copper/ molybdenum (niobium)/ indium gallium zinc oxide (IGZO) film, as well as preparation method and application thereof
  • Etching solution for copper/ molybdenum (niobium)/ indium gallium zinc oxide (IGZO) film, as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0085] The etching solution A agent (that is, the main agent, the same below) for the copper / molybdenum (niobium) / IGZO film layer in this embodiment includes the following components according to the mass percentage:

[0086]

[0087]The above-mentioned nitric acid and water were mixed and stirred, and then hydrofluoric acid, tetramethylammonium hydroxide, phenylurea, 9-aminocarbazole and hydrogen peroxide were sequentially added to the mixed system and stirred. It can be used after being filtered by 0.5μm and 0.2μm filter elements in turn. The pH of the A agent was 3.1.

[0088] During the whole preparation process, the temperature of the etching solution A agent system was maintained below 45°C.

[0089] The etching solution B agent (that is, the additive, the same below) used for the copper / molybdenum (niobium) / IGZO film layer in this embodiment includes the following components according to the mass percentage:

[0090]

[0091] The above nitric acid and water were...

Embodiment 2

[0094] The etching solution A for the copper / molybdenum (niobium) / IGZO film layer of this embodiment includes the following components according to the mass percentage:

[0095]

[0096] The above-mentioned nitric acid and water were mixed and stirred, and then ammonium fluoride, tetramethylammonium hydroxide, phenylurea, 3,9-diaminocarbazole and hydrogen peroxide were sequentially added to the mixed system and stirred. It can be used after being filtered by 0.5μm and 0.2μm filter elements in turn. The pH of the A agent was 3.1.

[0097] During the whole preparation process, the temperature of the etching solution A agent system was maintained below 45°C.

[0098] The etching solution B agent for the copper / molybdenum (niobium) / IGZO film layer of this embodiment includes the following components according to the mass percentage:

[0099]

[0100] The above-mentioned nitric acid and water were mixed and stirred, and then ammonium fluoride, tetramethylammonium hydroxide ...

Embodiment 3

[0103] The etching solution A for the copper / molybdenum (niobium) / IGZO film layer of this embodiment includes the following components according to the mass percentage:

[0104]

[0105] The above-mentioned nitric acid and water were mixed and stirred, and then hydrofluoric acid, tetramethylammonium hydroxide, phenylurea, 3,9-diaminocarbazole and hydrogen peroxide were sequentially added to the mixed system and stirred. It can be used after being filtered by 0.5μm and 0.2μm filter elements in turn. The pH of the A agent was 3.1.

[0106] During the whole preparation process, the temperature of the etching solution A agent system was maintained below 45°C.

[0107] The etching solution B agent for the copper / molybdenum (niobium) / IGZO film layer of this embodiment includes the following components according to the mass percentage:

[0108]

[0109] The above-mentioned nitric acid and water were mixed and stirred, and then hydrofluoric acid, tetramethylammonium hydroxide ...

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Abstract

The invention provides an etching solution for a copper / molybdenum (niobium) / indium gallium zinc oxide (IGZO) film, as well as a preparation method and application thereof. The etching solution comprises a main agent and an additive, wherein metal corrosion inhibitors in the main agent and the additive are amino carbazole metal corrosion inhibitors. According to the etching solution provided bythe invention, a metal source drain electrode and a semiconductor layer IGZO film can be etched synchronously, so that the utilization number of photomasks can be reduced, an IGZO-TFT manufacturing process flow is simplified, the enterprise production efficiency is improved, the production cost is reduced, and the product quality is ensured; and meanwhile, the etching solution can be loaded with copper ions up to 8000ppm so as to have higher service life.

Description

technical field [0001] The invention belongs to the field of chemical treatment of metal surfaces, and relates to an etching solution for copper / molybdenum (niobium) / IGZO film layers and a preparation method and application thereof. Background technique [0002] Thin Film Transistor (TFT, Thin Film Transistor), as the core component of flat panel display, controls the switching and color change of the display panel. TFT devices are composed of multiple layers stacked together. Each functional layer needs to go through multiple mask processes. Each mask process includes coating, photoresist coating, exposure, development, etching, photoresist Steps such as peeling require a lot of cost. Therefore, the number of mask processes directly determines the production cost of the display panel. [0003] In the traditional basic TFT manufacturing process, the film layers that need to use a mask process are the gate electrode, the active layer, the source / drain electrode (S / D) layer,...

Claims

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Application Information

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IPC IPC(8): C23F1/18C23F1/26C25F3/02C25F3/08C25F3/12H01L21/44H01L21/465
CPCC23F1/18C23F1/26C25F3/02C25F3/08C25F3/12H01L21/44H01L21/465
Inventor 徐帅张红伟李闯胡天齐钱铁民
Owner 江苏和达电子科技有限公司
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