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Hybrid perovskite-based write-once read-many memory and preparation method thereof

A multi-read, perovskite technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc. Problems such as high voltage, to achieve the effect of simple preparation method, simplified process flow and low misreading rate

Active Publication Date: 2020-06-26
HUNAN FIRST NORMAL UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this device, the perovskite film is prepared by vapor deposition method, the process is complicated, the switch of the device is relatively low, and the function of writing once and reading multiple times cannot be realized.
And the Chinese invention patent, authorized announcement number CN 107316939 B, the title of the invention is "a two-dimensional perovskite electric storage device based on pseudohalogen induction and its preparation method", and the memory in this patent is realized by two-dimensional perovskite materials However, the writing voltage of the device is high, the preparation process is demanding, and the preparation process needs nitrogen protection, and the switching ratio of the device still needs to be further improved.

Method used

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  • Hybrid perovskite-based write-once read-many memory and preparation method thereof
  • Hybrid perovskite-based write-once read-many memory and preparation method thereof
  • Hybrid perovskite-based write-once read-many memory and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0044] (1) cleaning ITO

[0045] Sonicate the ITO conductive glass in deionized water, acetone, and alcohol for 30 minutes, and then irradiate the ITO surface with ultraviolet light for 20 minutes in a UV cleaner;

[0046] (2) Configure the perovskite precursor solution

[0047] Weigh 0.229g of lead bromide and 0.070g of methylamine bromide according to the molar ratio of 1:1, mix and dissolve in 1mL of methylamine acetate solution, and then stir at 60°C for 2 hours to prepare perovskite with a concentration of 300mg / mL Ore precursor solution;

[0048] (3) Preparation of perovskite thin films

[0049] In an air environment, heat the ITO substrate in step (1) to 90°C, use a pipette gun to measure the perovskite precursor solution in step (2) and spin-coat it on the ITO surface, and set the speed of the spin coater to 4000rpm , the time is 20s, and then annealed at 100°C for 5min to obtain a dense perovskite active layer with a thickness of 300nm, and its surface morphology i...

Embodiment 2

[0055] (1) cleaning ITO

[0056] Sonicate the ITO conductive glass in deionized water, acetone, and alcohol for 30 minutes, and then irradiate the ITO surface with ultraviolet light for 15 minutes in a UV cleaner;

[0057] (2) Configure the perovskite precursor solution

[0058] Weigh 0.229g of lead bromide and 0.070g of methylamine bromide according to the molar ratio of 1:1, mix and dissolve in 1mL of methylamine acetate solution, and then stir at 60°C for 2 hours to prepare perovskite with a concentration of 300mg / mL Ore precursor solution;

[0059] (3) Preparation of perovskite thin films

[0060] In an air environment, heat the ITO substrate in step (1) to 100°C, use a pipette gun to measure the perovskite precursor solution in step (2) and spin-coat it on the ITO surface, and set the speed of the spin coater to 4000rpm , the time is 20s, and then annealed at 100°C for 5min to obtain a dense perovskite active layer with a thickness of 300nm;

[0061] (4) Prepare the t...

Embodiment 3

[0066] (1) cleaning ITO

[0067] Sonicate the ITO conductive glass in deionized water, acetone, and alcohol for 30 minutes, and then irradiate the ITO surface with ultraviolet light for 20 minutes in a UV cleaner;

[0068] (2) Configure the perovskite precursor solution

[0069] Weigh 0.229g of lead bromide and 0.070g of methylamine bromide according to the molar ratio of 1:1, mix and dissolve in 1mL of methylamine acetate solution, and then stir at 60°C for 2 hours to prepare perovskite with a concentration of 300mg / mL Ore precursor solution;

[0070] (3) Preparation of perovskite thin films

[0071] In an air environment, heat the ITO substrate in step (1) to 90°C, use a pipette gun to measure the perovskite precursor solution in step (2) and spin-coat it on the ITO surface, and set the speed of the spin coater to 3000rpm , the time is 20s, and then annealed at 90°C for 5min to obtain a dense perovskite active layer with a thickness of 350nm;

[0072] (4) Prepare the top...

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Abstract

The invention discloses a hybrid perovskite-based write-once read-many memory and a preparation method thereof, and relates to the technical field of semiconductor materials and functional devices. Aresistive random access memory sequentially comprises a glass substrate, a bottom electrode, a hybrid perovskite resistive random access layer and a top electrode from bottom to top, wherein the resistive layer is made of a CH3NH3PbBr3 thin film, and the perovskite thin film is prepared in the air by adopting a solution method. The preparation method of the memory comprises the following steps ofspin-coating the CH3NH3PbBr3 film layer on the surface of a pretreated bottom electrode; and evaporating a metal electrode on the surface of the CH3NH3PbBr3 thin film layer. According to the invention, the adopted raw materials are easy to obtain, the preparation process is simple, green and environment-friendly, the operability is strong, and the prepared resistive random access memory is simplein structure, low in write-in voltage and high in switch ratio and is beneficial to industrial application.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and functional devices, in particular to a write-once-read-many memory based on a hybrid perovskite and a preparation method thereof. Background technique [0002] Memory is an important part of modern information technology. With the rapid development of artificial intelligence and big data technology, the amount of data is increasing rapidly, and the requirements for data processing capabilities of memory are constantly increasing. Traditional flash memory technology has slow erasing and writing speed, high power consumption, and faces the bottleneck of size reduction, making it difficult to adapt to the development needs of future memory. The resistive memory has the advantages of simple structure, high storage density, fast read and write speed, long life and compatibility with complementary metal oxide semiconductor technology, and is an ideal choice for the next generation o...

Claims

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Application Information

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IPC IPC(8): H01L51/05H01L51/10H01L51/40
CPCH10K71/12H10K71/60H10K10/29H10K10/50H10K10/82
Inventor 李必鑫陈永华夏英东黄维
Owner HUNAN FIRST NORMAL UNIV