Preparation method of Si-based modified Ge monolithic same-layer photoelectric integrated device

Abstract

The invention relates to a preparation method of a Si-based modified Ge monolithic same-layer photoelectric integrated device. The preparation method comprises the following steps: sequentially growing an intrinsic Ge layer, a p-type Ge main body layer, an n-type doped Ge layer, an n-type doped Si layer and a protective layer on a substrate; etching the protective layer, the n-type doped Si layer,the n-type doped Ge layer and the p-type Ge main body layer to form an isolation trench, a first structure, a second structure and a third structure; preparing an isolation layer in the isolation trench; depositing a first SiN film on the surfaces of the second p-type Ge main body layer, the isolation layer and the intrinsic Ge layer; depositing a second SiN film on the surfaces of the second protective layer and the intrinsic Ge layer; and preparing electrodes on the first protective layer, the intrinsic Ge layer and the second SiN film. According to the photoelectric integrated device, theforbidden bandwidth of the waveguide and the forbidden bandwidth of the detector are adjusted through the SiN film, so that the energy band relation of the integrated device is modulated, and the monolithic optical integrated structure is prepared from the same material.

Description

Technical field [0001] The invention belongs to the technical field of semiconductors, and specifically relates to a preparation method of a Si-based modified Ge monolithic same-layer optoelectronic integrated device. Background technique [0002] With the continuous development of optical communication technology and integrated circuits, the miniaturization and low power consumption of photoelectric signal conversion equipment have become more and more urgent. In the fields of optical devices, electrical devices and optoelectronic integration, silicon-based materials are the mainstay of the current microelectronics industry, with a very mature industrial foundation, and are the first choice for optoelectronic integrated materials. However, the rapid development of Si-based optical communication and photoelectric integration technology urgently requires the development of new materials that are compatible with the Si process and have good optoelectronic properties. Therefore, Si...

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Problems solved by technology

[0004] However, although the Si-based modified Ge thin film has the ability to monolithically integrate light-emitting devices, waveguides and detectors in the same layer, there are still incompatibility in the process and structure in the integrated device and manufacturing process, and the active layer materials of each part of the device The problem of inconsistent band gap width and energy band structure

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