Laser structure

A laser, distributed technology, used in lasers, laser parts, semiconductor lasers, etc., can solve the problems of many high-reflection coating layers, difficult process, easy to fall off, etc., to achieve easier control of growth parameters and monochromaticity. Good, not easy to fall off effect

Inactive Publication Date: 2020-06-30
XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, when the germanium material-based laser uses a Fabry Perot resonator, due to its large wavelength and the number of coating layers of the high-reflection film, the process is difficult and easy to fall off

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  • Laser structure
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Embodiment Construction

[0029] The present invention will be described in further detail below in conjunction with specific examples, but the embodiments of the present invention are not limited thereto.

[0030] See figure 1 , figure 1 It is a schematic diagram of the laser structure of the present invention. The laser structure of the present invention includes from bottom to top: a substrate layer 10; a first distributed Bragg mirror layer 20; a first n-type Ge layer 30; a second n-type Ge layer 40; a first p-type Ge layer 50; the second p-type Ge layer 60 ; the second distributed Bragg reflector layer 70 .

[0031] See figure 2 , figure 2 is a schematic structural diagram of the first distributed Bragg reflector layer 20 . The first distributed Bragg mirror layer 20 includes alternately grown high-refractive-index material layers and low-refractive-index material layers, wherein the high-refractive index material layer is a GaAs / AIAs material layer 21, and GaAs / AIAs is a superlattice mater...

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Abstract

The invention relates to a laser structure. The laser structure comprises a substrate layer, a first distributed Bragg reflector layer, a first n type Ge layer, a second n type Ge layer, a first p type Ge layer, a second p type Ge layer and a second distributed Bragg reflector layer that are arranged successively from bottom to top. According to the laser structure, a GaAs / AIAs superlattice material is used as a high-refractive-index material layer, and an AIAs material is used as a low-refractive-index material layer; the formed distributed Bragg reflector replaces a traditional FB resonant cavity, so that the processing is simple, the monochromaticity of laser is better; and the process difficulty can be reduced, and the distributed Bragg reflector is not easy to fall off.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a laser structure. Background technique [0002] Semiconductor lasers have outstanding features such as high energy conversion efficiency, easy high-speed current modulation, ultra-miniaturization, simple structure, and long service life, and have been considered in the application of optoelectronic integration. With the improvement of epitaxial growth technology of germanium on silicon, germanium semiconductor materials have become a research hotspot, especially the preparation of lasers with germanium materials as on-chip light sources is the frontier of research. [0003] However, when the Germanium material-based laser uses a Fabry Perot resonator, due to its large wavelength and the number of coating layers of the high-reflection film, the process is difficult and easy to fall off. Contents of the invention [0004] In order to solve the above problems ...

Claims

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Application Information

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IPC IPC(8): H01S5/187H01S5/323
CPCH01S5/187H01S5/32316
Inventor 李全杰刘向英
Owner XIAN ZHISHENG RUIXIN SEMICON TECH CO LTD
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