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Preparation method of stress-stretching-resistant flexible film

A flexible film and stress-resistant technology, applied in the field of flexible film preparation, can solve the problems of numerous production steps and complicated processes, and achieve the effects of simple and easy preparation method, wide application prospect and low cost

Active Publication Date: 2020-07-03
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to overcome the deficiencies of the prior art. In order to improve the problems of the prior art with many manufacturing steps and complex processes, we propose a method for preparing a flexible film resistant to stress stretching

Method used

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  • Preparation method of stress-stretching-resistant flexible film
  • Preparation method of stress-stretching-resistant flexible film
  • Preparation method of stress-stretching-resistant flexible film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] A preparation method of a flexible film resistant to stress stretching, comprising the steps of:

[0043] Step 1: Dissolve 0.0394g PVK into 1mL styrene to prepare high-precision printing ink;

[0044] Step 2: Using an electrofluidic printing device (E-Jet), the ink is digitally and controllably printed as a long and continuous PVK nanowire mask network on a flexible substrate SEBS. Among them, the voltage between the syringe needle and the receiving surface is controlled to be 3.6kV, the distance between the syringe needle and the substrate is 2.5mm, the liquid flow rate at the syringe needle is 10nL / min, the movement speed of the substrate is 150mm / s, and the distance between the nanowire array is 100 μm, and the diameter of the nanowire is 500 nm.

[0045] Step 3: Evaporate elemental aluminum with a thickness of 30nm on the flexible substrate and the nanowire mask. After removing the nanowire mask, an aluminum electrode array (10 rows, 10 columns) with a gap of 500nm...

Embodiment 2

[0050] Other steps are with embodiment 1, difference is:

[0051] In step 1, the quality of PVK is 0.0788g;

[0052] In step 2, the diameter of the nanowire is 200nm;

[0053] In step 3, the non-stretchable material is copper, and the thickness is 20 nanometers;

[0054] The stretchable flexible device distributed in the copper metal array obtained in step 4 is stretched by 500% along the direction of nanowire arrangement, and the morphology of the flexible thin film device does not change significantly before and after stretching.

Embodiment 3

[0056] Other steps are with embodiment 1, difference is:

[0057] In step 1, the quality of PVK is 0.0591g;

[0058] In step 2, the diameter of the nanowire is 800nm;

[0059] In step 3, the low-stretch material is C8-BTBT, and the thickness is 80 nanometers;

[0060] The stretchable flexible device distributed in the C8-BTBT array obtained in step 4 was stretched by 120% along the direction of nanowire arrangement, and the morphology of the flexible thin film device did not change significantly before and after stretching.

[0061] In summary, the manufacturing method of the stress-stretch-resistant flexible film proposed by the present invention is not only simple and easy, but also low in cost and can be mass-produced; at the same time, flexible electronic devices with good quality, thin thickness and excellent performance are obtained. The role of light-emitting diodes (LEDs) is pixel separation, and the role of devices in thin-film transistors (TFTs), capacitors, and ba...

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Abstract

The invention relates to a preparation method of a stress-stretching-resistant flexible film. The method comprises the following steps that a high polymer material is dissolved into a solvent to prepare high-precision printing ink; ink is printed digitally and controllably into a long and continuous PVK nanowire mask mesh on a flexible substrate by using high-resolution electrofluid jet printing equipment; and a rigid material is evaporated on the mask mesh, and then a nanowire mask is removed to obtain a stretchable flexible device of the rigid material in array distribution, namely the stress-stretching-resistant flexible film. According to the method, a whole piece of material which is not resistant to stress stretching is refined into combination of countless tiny monomers, flexible stress stretching resistance of the material can be achieved, and the method is simple, easy to implement, low in cost, capable of achieving large-scale production and wide in application prospect.

Description

technical field [0001] The invention belongs to the field of flexible electronics, and in particular relates to a preparation method for converting a flexible material film not resistant to stress stretching into a flexible film resistant to stress stretching by digital controllable nanowire printing technology. This method can be used to make stretchable and flexible electronic devices and so on. Background technique [0002] At present, the electronic information industry is still dominated by rigid devices and systems. After nearly a hundred years of technology accumulation, rigid devices have the advantages of mature processing equipment, high operating speed, high accuracy, and high stability. However, the limitations of classical silicon-based electronics are increasingly highlighted by Moore's Law. The birth of flexible electronics provides a new direction for the development of classical electronics, triggers the emergence of new forms of electronic devices, and wi...

Claims

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Application Information

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IPC IPC(8): B41J3/407B41J29/393C23C14/04C23C14/24C23C14/20C23C14/06C23C14/08C23C14/12C09D11/106C08J7/04C08L53/02
CPCB41J3/407B41J29/393C08J7/042C08J2353/02C09D11/106C23C14/042C23C14/0617C23C14/0623C23C14/08C23C14/081C23C14/083C23C14/086C23C14/087C23C14/12C23C14/20C23C14/24
Inventor 徐文涛
Owner NANKAI UNIV