Photoresist-assisted local heating magnetic storage unit and preparation method thereof, and logic device

Abstract

The invention discloses a photoresist-assisted local heating magnetic storage unit and a preparation method thereof, and a logic device. The photoresist-assisted local heating magnetic storage unit comprises: a substrate; a spin orbit coupling layer located on the substrate, wherein spin current perpendicular to the surface direction of the spin orbit coupling layer is generated by applying current to the spin orbit coupling layer; and a magnetic free layer located on the spin orbit coupling layer, wherein the magnetic free layer comprises a shielding area and a heating area, the shielding area is covered with a photoresist, gradient changes of components, structures or magnetism of the magnetic free layer are generated by heating the heating area of the magnetic free layer, and the magnetic moment of the magnetic free layer is directionally overturned in cooperation with spin currents. According to the invention, only the position needing local heating is exposed, other positions arecovered by the photoresist, and the patterns can be nano-scale by using photoetching processes (including an immersion photoetching process, an extreme ultraviolet photoetching process and the like),so that the miniaturization of the device can be realized, and the integration level of the device can be improved.

Description

technical field [0001] The invention relates to the fields of information technology and microelectronics, in particular to a photoresist assisted local heating magnetic storage unit, a preparation method and a logic device. Background technique [0002] In today's information society, the use of electron spins for information processing and storage has attracted worldwide attention and research, including magnetic nanologic, full spin logic, and magnetic tunnel junctions as logic operations and storage. The current commercially developed spin-transfer torque-magnetic random access memory (STT-MARM) and the spin-orbit moment-magnetic random access memory (SOT-MRAM), which is still in laboratory research, are both based on the magnetization of the magnetic free layer in the storage unit. The reversal of the magnetic resistance leads to the change of the magnetic resistance, thereby realizing the storage function of information, which has the advantages of fast speed and non-v...

AI Technical Summary

Problems solved by technology

However, magnetic storage based on the spin-orbit moment effect usually requires the assistance of an external magnetic field, which is not conducive to the miniaturization of storage devices and will restrict the further development of information technology. Therefore, how to use the spin-orbit moment effect to control the magnetization flip without an external magnetic field, Realizing information storage and processing is an urgent need in the information field

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