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Process for preparing high purity SiC powder

A high-purity, powder-based technology, used in carbide, silicon carbide, grain processing, etc., can solve problems such as high processing costs and environmental problems

Pending Publication Date: 2020-07-07
KCIND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, so far, environmental problems have arisen and high disposal costs have arisen due to said waste being landfilled

Method used

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Embodiment Construction

[0012] Hereinafter, the present invention will be described in detail based on the embodiments. The embodiments are not limited to those disclosed below, but can be modified into various forms as long as the gist of the present invention is not changed.

[0013] In this specification, when a part is described as "including" an element, it should be understood that it may also include other elements, rather than being excluded from other elements, unless otherwise specified.

[0014] In this specification, all numbers and expressions related to the amounts of ingredients, reaction conditions, etc. should be understood as being modified by the word "about" unless otherwise specified.

[0015] The method for preparing SiC powder disclosed in one embodiment of the present invention includes: pulverizing waste SiC, classifying the pulverized waste SiC, removing the iron (Fe) component in the classified waste SiC, and cleaning the waste SiC after removing the iron component .

[0016] The ...

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Abstract

A process for preparing high purity SiC powder according to the embodiment not only solves the environmental problems by using waste SiC, but also reduces the manufacturing cost with high yield, highproductivity, and high uniformity.

Description

Technical field [0001] The invention relates to a method for preparing high-purity silicon carbide (SiC) powder using SiC waste. Background technique [0002] Silicon carbide (SiC) has excellent heat resistance and mechanical strength, radiation resistance, and can be made into large diameter substrates. In addition, silicon carbide has excellent physical strength and chemical resistance, large energy band gap, high saturated electron drift speed, and high breakdown voltage. Therefore, it is not only widely used in semiconductor devices that require high power, high efficiency, high breakdown voltage and high capacity, but also can be used in abrasives, bearings, fireproof boards, etc. [0003] For example, Japanese Patent Publication No. 2002-326876 discloses a method for preparing silicon carbide by subjecting a silicon carbide precursor to high-temperature heat treatment in an inert gas such as argon (Ar) to polymerize or crosslink a silicon source and a carbon source. method....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/956
CPCC01B32/956C01P2006/80B02C23/10B02C21/00C01P2004/61C01P2004/64C01P2004/62
Inventor 李奎都金兑喜李采泳
Owner KCIND CO LTD