Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A chemical mechanical polishing solution and its application

A chemical-mechanical, polishing liquid technology, applied in polishing compositions containing abrasives, electrical components, circuits, etc., can solve the problem of lack of polishing rate selectivity, etc., and achieve the effect of good removal

Active Publication Date: 2022-08-05
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing chemical mechanical polishing fluid does not have the polishing rate selectivity of the three substances of silicon nitride / silicon oxide / polysilicon as mentioned above.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A chemical mechanical polishing solution and its application
  • A chemical mechanical polishing solution and its application
  • A chemical mechanical polishing solution and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The advantages of the present invention are further described below through specific examples, but the protection scope of the present invention is not limited to the following examples.

[0020] Table 1 shows the composition and content of the polishing liquids of Examples 1-10 and Comparative Examples 1-5 of the present invention. According to this table, the polishing liquids of the examples and comparative examples were prepared, the components were mixed uniformly, the mass percentage was made up to 100% with water, and the pH was adjusted to the corresponding value with a pH regulator to obtain the polishing liquids of the embodiments and comparative examples of the present invention.

[0021] Table 1 Compositions of polishing liquids of Examples 1-10 of the present invention and Comparative Examples 1-5

[0022]

[0023]

[0024] 8-inch polycrystalline silicon wafers containing silicon nitride and silicon dioxide were polished with the chemical mechanical p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a chemical mechanical polishing liquid, comprising silica abrasive particles, a nitrogen-containing heterocyclic compound containing one or more carboxyl groups, and an ethoxylated butoxylated alkyl alcohol. The present invention also provides an application of the above chemical mechanical polishing liquid in the polishing of silicon dioxide, polysilicon and silicon nitride. The polishing rate of the polishing solution of the present invention for silicon nitride is far greater than that for silicon dioxide and polysilicon, so that it can be well applied to chemical mechanical polishing with silicon dioxide / polysilicon as the stop layer. The amount of oxide and polysilicon removed from the surface of the substrate during the polishing process can be effectively controlled.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid and its application. Background technique [0002] In the production process of the semiconductor chip, the step of removing the silicon nitride layer is performed at various stages, for example, in the step of forming the element separation structure, the silicon nitride layer as a barrier layer is removed. However, this removal step is usually carried out at a high temperature of about 150° C. by a wet etching process using, for example, a phosphoric acid / nitric acid mixed solution, and chemical mechanical polishing is rarely used. [0003] At present, the method for isolating each element in a semiconductor device is mainly a shallow trench isolation (STI) process, that is, a silicon nitride layer is first formed on a silicon substrate, a shallow trench is formed by etching or photolithography, and then a dielectric is deposit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02H01L21/306
CPCC09G1/02H01L21/30625C23F3/06H01L21/31053H01L21/3212
Inventor 周文婷荆建芬姚颖蔡鑫元马健李恒
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products