Treatment method for removing an oxide film of an electrode and etching the electrode

A technology of electrode oxidation and treatment method, applied in the field of oxide film, which can solve the problems of rough surface, increased aspect ratio of micro patterns, and inability to uniformly etch the surface

Pending Publication Date: 2020-07-07
TES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, wet etching has major problems such as the fact that the aspect ratio of the minute pattern increases and the surface cannot be etched uniformly, and the pattern collapses.
[0006] However, there is a problem in performing the plasma etching process that the plasma energy roughens the surface while etching the substrate, or creates defects due to adsorption or penetration of plasma-activated elements to the substrate surface
[0007] In addition, in the case where an etching process is used for a structure having a high aspect ratio by a plasma process, there is a problem that, for example, in

Method used

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  • Treatment method for removing an oxide film of an electrode and etching the electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0089] Embodiment 1: Removal of oxide film of tungsten and etching of tungsten 1

[0090] 1. Removal of oxide film formed on tungsten

[0091] After confirming that an oxide film was formed on the tungsten opened by forming the channel, the tungsten on which the channel was formed was placed on the susceptor of the processing chamber. H 2 / Ar (flow ratio = 0.05) reaction gas was injected into the chamber, 1.5kW RF power was applied to generate plasma, and then the tungsten oxide film was removed by reaction of reactive radicals passing through the shower head for 240 seconds.

[0092] 2. Etching of tungsten

[0093] Provides ClF to tungsten from oxide film removal 3 / N 2 gas to etch tungsten. At this time, the etching time was 120 seconds.

Embodiment 2

[0094] Embodiment 2: Removal of oxide film of tungsten and etching of tungsten 2

[0095] The oxide film formed on tungsten was removed and the tungsten was etched in the same manner as in Example 1 except that 2.0 kW of RF power was applied during the removal process of the oxide film formed on tungsten.

Embodiment 3

[0096] Embodiment 3: Removal of oxide film of tungsten and etching of tungsten 3

[0097] The oxide film formed on tungsten was removed and the tungsten was etched in the same manner as in Example 1 except that 2.5 kW of RF power was applied during the removal process of the oxide film formed on tungsten.

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PUM

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Abstract

The invention relates to a treatment method for removing an oxide film of an electrode and etching the electrode using plasma and gas, and more specifically, to a process including removing the oxidefilm formed on the electrode from the electrode formed with a channel, and a treatment method for removing the oxide film of the electrode and etching the electrode in the step of performing an etching process on the electrode from which the oxide film is removed.

Description

technical field [0001] The invention relates to a method for removing an oxide film formed on an electrode by using plasma and gas, and treating the damaged part of the electrode through an etching process. Background technique [0002] Integrated circuits are manufactured by processes that form intricately patterned layers of substances on the surface of a substrate. In order to form a patterned substance on a substrate, a controlled process of removing the substance is required. Such a process includes a wet etching method using a chemical reaction (solution), a dry etching method using a chemical reaction (gas), and the like. [0003] On the other hand, wet etching includes transferring a photoresist pattern to a layer provided underneath, thinning a layer, or thinning the lateral dimension of a feature already present on the surface, and thus serves various purposes. [0004] However, wet etching has major problems in that the aspect ratio of the minute pattern increas...

Claims

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Application Information

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IPC IPC(8): H01L21/3105
CPCH01L21/31055H01L21/32135H01L21/3065H01L21/76865H01L21/7685
Inventor 权捧秀金洗璨吉惠晙
Owner TES CO LTD
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