Composite material, thin film and preparation method thereof, quantum dot light-emitting diode

A quantum dot light-emitting and composite material technology, which is applied in the field of quantum dot light-emitting diodes, can solve the problems of many surface defect states and unfavorable charge balance.

Active Publication Date: 2021-07-06
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a composite material, aiming to solve the problem that when using nano zinc oxide as the electron transport layer in the prior art, there are many surface defect states, quenching excitons, and it is not conducive to the realization of charge balance.

Method used

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  • Composite material, thin film and preparation method thereof, quantum dot light-emitting diode
  • Composite material, thin film and preparation method thereof, quantum dot light-emitting diode

Examples

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preparation example Construction

[0033] Correspondingly, refer to figure 2 Shown is a schematic flowchart of a method for preparing a thin film according to an embodiment of the present invention. An embodiment of the present invention provides a method for preparing a thin film, including the following steps:

[0034] S01. according to the ratio that graphene accounts for 0.1%~10% of the total weight of graphene and nano-zinc oxide, nano-zinc oxide and graphene are dispersed in an organic solvent, and ultrasonic treatment is carried out after mixing to obtain a mixed solution;

[0035] S02. Deposit the mixed solution on the surface of the substrate, and dry to form a film.

[0036] In the method for preparing the film provided in the embodiment of the present invention, graphene and nano-zinc oxide are dispersed in an organic solvent according to the dosage ratio, and after mixing, ultrasonically dispersed, the obtained mixed solution is deposited on the surface of the target substrate of the film to be dep...

Embodiment 1

[0072] A quantum dot light-emitting diode, comprising a substrate, an anode and a cathode arranged on the substrate, a stacked structure arranged between the anode and the cathode, the stacked structure comprising a stacked hole injection layer - hole transport layer - quantum dot light emitting layer - electron transport layer, wherein the hole injection layer is arranged adjacent to the anode and the electron transport layer is arranged adjacent to the cathode.

[0073] The preparation method of the quantum dot light-emitting diode comprises the following steps:

[0074] depositing a hole injection layer on the anode substrate, depositing a hole transport layer on the hole injection layer, and depositing a quantum dot light-emitting layer on the hole transport layer;

[0075] The composite material solution of graphene / ZnO is spin-coated on the quantum dot light-emitting layer, and placed in a heatable device, wherein the heatable device comprises a bottom plate and a top pl...

Embodiment 2

[0078] The difference from Example 1 is that the heating temperature of the bottom plate is 60° C., the heating temperature of the top plate is 100° C., and the height between the bottom plate and the top plate is taken as h, the The substrate is placed between h / 3 and 2h / 3.

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Abstract

The invention provides a composite material, the composite material is nano zinc oxide and graphene, and based on the total weight of the composite material being 100%, the weight percentage of the graphene is 0.1% to 10% . When the composite material of nano-zinc oxide and appropriate amount of graphene is used as the electron transport layer material of quantum dot light-emitting devices, it can prevent electrons from being further transported to the valence band of quantum dots, reduce the probability of exciton quenching, and improve the luminous efficiency of the device.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a composite material, a thin film and a preparation method thereof, and a quantum dot light-emitting diode. Background technique [0002] Quantum dot light-emitting diode (QLED) is a device that applies a DC voltage to the anode and cathode to drive the quantum dot material to emit light. It has the advantages of color saturation, high purity, good monochromaticity, adjustable color and can be prepared by solution method. It is considered to be the dominant technology of next-generation flat panel displays. [0003] At present, the well-researched QLED usually adopts a multi-layer structure, and the device includes an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode. Qualified carrier transport layers usually need to have suitable optoelectronic properties (including energy band structure, elect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/54H01L51/56H01L51/50
CPCH10K50/165H10K2102/00H10K71/00H10K50/00
Inventor 张滔向超宇朱佩罗植天
Owner TCL CORPORATION
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