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Method, device and equipment for predicting crystal thermal field distribution

A field distribution, crystal technology, applied in the computer field, can solve the problem of lack of reliability

Pending Publication Date: 2020-07-10
SICC CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of this, the embodiment of the present application provides a method, device and equipment for predicting the crystal thermal field distribution, which is used to solve the lack of reliable technical means in the prior art to measure and monitor the temperature distribution during the crystal growth process. question

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  • Method, device and equipment for predicting crystal thermal field distribution
  • Method, device and equipment for predicting crystal thermal field distribution

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Embodiment Construction

[0038] Silicon carbide (SiC), also known as a wide bandgap semiconductor material, is a single crystal material composed of two elements, carbon and silicon. Compared with traditional semiconductor materials, it has better physical properties, especially in terms of band gap, thermal conductivity, saturated electron drift rate, and breakdown field strength, and can realize devices in extreme environments such as high temperature, high pressure, and high frequency. Therefore, it has important application prospects in microwave communication, power electronic devices, optoelectronic devices and other fields. With the rapid development of industries such as 5G communications, electric vehicles, the Internet of Things, and DC flexible power transmission and transformation, the demand for silicon carbide substrate materials will continue to expand.

[0039] At present, the method that can prepare silicon carbide single crystals in batches is the physical vapor transport method, whi...

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Abstract

The invention discloses a method for predicting crystal thermal field distribution, and the method comprises the steps: determining a parameter value of the change of a crystal thermal field structurewhich is a cavity structure and is provided with a built-in crystal in the middle; inputting the parameter values of the temperature field structure change data of the crystal into a pre-trained temperature distribution prediction model to predict temperature distribution corresponding to the temperature field structure, wherein the temperature distribution prediction model comprises a temperature field structure parameter input layer, a full connection layer neural network hidden layer and a temperature distribution prediction output layer, and the temperature distribution is temperature distribution in a temperature field structure cavity. When the temperature field structure is changed, the temperature distribution corresponding to the temperature field structure can be predicted through the temperature distribution prediction model; and the temperature distribution corresponding to the temperature field structure is enabled to be in a monitored state, and once the temperature distribution prediction model predicts that the temperature distribution corresponding to the temperature field structure is in an abnormal range, warning information can be sent out to remind managementpersonnel to carry out processing in time.

Description

technical field [0001] The present application relates to the field of computer technology, in particular to a method, device and equipment for predicting crystal thermal field distribution. Background technique [0002] At present, the method that can prepare silicon carbide single crystals in batches is the physical vapor transport method, which is a method of gasifying the raw materials in a low-pressure environment through high temperature, and then promoting their upward sublimation and crystallization on the surface of the seed crystal under the action of a temperature gradient. Since the stacking fault energy of silicon carbide is very low, many crystal forms require dozens of layers of structure to stabilize. Therefore, there are more than 240 isomers of silicon carbide, and the crystal lattice is maintained during the crystal growth process. A stable and reasonable temperature field distribution is required, which has become one of the main technical bottlenecks res...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/20G06N3/08G06N3/04
CPCG06N3/08G06N3/045Y02E60/00
Inventor 王雅儒舒天宇周敏刘圆圆姜兴刚张红岩
Owner SICC CO LTD