HEMT device based on Fin-like side wall modulation of transconductance compensation method and preparation method of HEMT device

Abstract

The invention relates to an HEMT device based on the Fin-like side wall modulation of a transconductance compensation method and a preparation method of the HEMT device. The HEMT device comprises a substrate layer; an insertion layer on the substrate layer; a buffer layer on the interposer layer; a source electrode at one end of the buffer layer; a drain electrode located at the other end of the buffer layer; the barrier layer located on the buffer layer and located between a source electrode and a drain electrode, wherein a plurality of grooves arranged along the gate width direction are formed in the barrier layer, and the depth of the grooves is smaller than the thickness of the barrier layer; a passivation layer which covers the source electrode, the drain electrode and the barrier layer, wherein a gate groove penetrates through the passivation layer in the gate width direction, and a plurality of grooves are located below the gate groove; a gate electrode which is positioned in the plurality of grooves and the gate groove and is positioned on the surface of the passivation layer; and a metal interconnection layer which penetrates through the passivation layer and is positionedon the source electrode and the drain electrode. According to the HEMT device, a plurality of grooves are arranged along the gate width direction to form a Fin-like structure, so that the applicationrequirements for high frequency and high linearity and high voltage and high linearity can be met.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a Fin-like sidewall modulated HEMT device based on a transconductance compensation method and a preparation method thereof. Background technique [0002] In recent years, with the surge in demand for the Internet of Things and the development of mobile devices, people have higher requirements for the transmission efficiency of wireless communication technologies. For example, in millimeter wave applications such as 5G-LTE, WIMAX, satellite communication, radar, and space applications, the power amplifier (PA) is an important part of the communication link transmitter. In order to obtain sufficient transmission power, it must Work under the condition of high power output, but at this time PA will consume a lot of power, the linearity is very poor, resulting in low transmission efficiency, signal distortion and degradation of transmission quality, so in or...

AI Technical Summary

Problems solved by technology

However, due to the large gate parasitic capacitance introduced by the insulating layer under the gate, the frequency characteristics of the device are deteriorated, and it is not suitable for making high-frequency devices.

[0010] In summary, the methods for improving device linearity in the prior art have the problems of large device etching damage, thick barrier layer, and large gate parasitic capacitance, which limits the application of linear devices at high frequencies.

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