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Method for controlling deformation generated in transmission electron microscope sample preparation

An electron microscope and sample preparation technology, applied in material analysis using radiation diffraction, material analysis using radiation, material analysis using wave/particle radiation, etc., to achieve the effect of reducing the probability of sample deformation and improving efficiency and success rate

Pending Publication Date: 2020-07-31
TPK TOUCH SOLUTIONS (XIAMEN) INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Clearly, the known methods of preparing samples for transmission electron microscopy are not ideal

Method used

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  • Method for controlling deformation generated in transmission electron microscope sample preparation
  • Method for controlling deformation generated in transmission electron microscope sample preparation
  • Method for controlling deformation generated in transmission electron microscope sample preparation

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Embodiment Construction

[0047] In order to make the purpose, technical solutions and advantages of the disclosure clearer, the disclosure will be further described in detail below in conjunction with the accompanying drawings, implementations, and examples. It should be understood that the specific implementations and examples described herein are only used to explain the present disclosure, and are not intended to limit the scope of the claims.

[0048] Please see Figure 5 , depicts a flowchart of a method of preparing a sample for a transmission electron microscope, according to some embodiments.

[0049] In step S100 of the method 10, a focused ion beam system is provided to obtain a sample of an electronic component placed on a substrate.

[0050] In some implementations, as shown in FIG. 6, the above step S100 may specifically include the following steps S102 to S108.

[0051] In step S102, an initial sample of an electronic component is provided, which may be a sample including semiconductor...

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Abstract

The invention relates to preparation of an electron microscope sample, and provides a method for controlling deformation generated in transmission electron microscope sample preparation. The method comprises the following steps of providing an electronic component sample placed on a substrate based on a focused ion beam system, performing pre-thinning treatment, thinning the electronic component sample to a first thickness of 1.3-1.7 microns, conducting first thinning treatment, thinning the electronic component sample to a second thickness at a tilt angle of + / -(0.5 degrees to 1.5 degrees) and a first diaphragm hole, the second thickness being 700 nanometers to 900 nanometers, conducting second thinning treatment, thinning the electronic component sample to a third thickness of 250-350 nanometers according to the tilt angle and a second diaphragm hole, and conducting a third thinning process of thinning the electronic component sample to a fourth thickness of less than or equal to 100nanometers according to the tilt angle and a third diaphragm hole, the first diaphragm hole being larger than the second diaphragm hole, and the second diaphragm hole being larger than the third diaphragm hole.

Description

technical field [0001] The disclosure relates to the technical field of transmission electron microscope sample preparation, and in particular to a method for controlling sample deformation of electronic component samples during sample preparation and thinning. Background technique [0002] Transmission electron microscope (TEM) samples usually need to be thinned to less than 100 nanometers (nm), and the most convenient and effective preparation method today is to obtain thin slices by cutting them with a focused ion beam system (FIB). In the focused ion beam system, the high-energy gallium ion beam is accelerated to the surface of the sample by the magnetic lenses at various levels driven by the accelerating voltage, and the incident ions exchange energy with the surface atoms to achieve the cutting function. The sample needs to be thinned on both sides, and finally a thin sample with a thickness of less than 100 nanometers is obtained. [0003] However, during the prepara...

Claims

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Application Information

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IPC IPC(8): G01N23/2005G01N23/04G01N23/20G01N23/20025
CPCG01N23/2005G01N23/04G01N23/20G01N23/20025
Inventor 李毅峰林丽娟杨詠钧杨培华谢忠诚
Owner TPK TOUCH SOLUTIONS (XIAMEN) INC
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