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Methods and assemblies using flourine containing and inert gasses for plasma flood gun (PFG) operation

A technology of inert gas and fluorine-containing gas, applied in the direction of plasma, discharge tube ion gun, electrical components, etc., can solve the problems of reducing the yield of ion implantation system and process

Pending Publication Date: 2020-08-04
ENTEGRIS INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Also relevant to performance, the sputtered filament material (eg, tungsten) can enter the ion-implanted wafer substrate, where the sputtered filament material (eg, tungsten) is deposited as a contaminant in the substrate and reduce the yield of ion implantation systems and processes

Method used

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  • Methods and assemblies using flourine containing and inert gasses for plasma flood gun (PFG) operation
  • Methods and assemblies using flourine containing and inert gasses for plasma flood gun (PFG) operation
  • Methods and assemblies using flourine containing and inert gasses for plasma flood gun (PFG) operation

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0086] Beam test using Xe gas

[0087] A Bernas ion source with a graphite arc chamber was used. The ion beam conditions are as follows: arc voltage: 50V; arc current: 0.75A; extraction voltage: 20kV; suppression voltage: 3kV. The inert gas used was argon, which flowed into the arc chamber at a rate of 1 sccm or 1.5 sccm. Fluorine-containing gas is a 2% gas mixture (Ar+NF 3 ) using NF 3 , corresponding to a flow rate of 0.021 sccm (1 sccm Ar flow) or 0.031 sccm (1.5 sccm Ar flow). The arc chamber was operated under the gas flow for a total of 11 hours and the source was checked after the operating period and the filament weight was measured and the results are shown in Table 1.

[0088] Table 1

[0089] source# Argon (sccm) NF3(%) Filament Weight Change (g) 1 1 0 -0.037 2 1 2％ -0.021 3 1.5 0 -0.030 4 1.5 2％ -0.006

[0090] All filament weight changes were negative relative to filament weight loss. When fluorine gas NF is p...

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Abstract

A gas supply assembly is described for delivery of gas to a plasma flood gun which includes an inert gas and a fluorine-containing gas, wherein the assembly is configured to deliver a volume of the fluorine-containing gas to the flood gun that is not greater than 10% of a total volume of the fluorine-containing and inert gasses. The fluorine-containing gas can generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun. In combination with the gas amounts, the assembly and methods can use gas flow rates to optimize the cleaning effect and reduce filament material loss from the plasma flood gun during use.

Description

technical field [0001] The present invention relates generally to ion implantation apparatus and processes, and more particularly to apparatus and methods for improving the performance of ion implantation plasma immersion guns. Background technique [0002] In the field of semiconductor manufacturing, ion implantation is a fundamental unit operation in the manufacture of semiconductor components. Ion implantation apparatus can be of widely different types and can include beam ion implantation systems, plasma immersion systems, and other different types of systems. [0003] When using a beam ion implantation system, positively charged ions impact the wafer substrate to be implanted, and this impact causes positive charges to accumulate on insulating regions of the wafer substrate, creating a positive surface potential. Wafer charging can also result in secondary emission of electrons from the wafer substrate. The wafer substrate surface charge can be so strong that it can a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/08H01J3/04H01L21/265
CPCH01J37/32449H01J2237/31701H01J2237/0044H01J37/026H01J2237/006H01J2237/022Y02P80/30H01J37/3171H01J3/04H01J37/08H01J2237/004
Inventor J·R·德普雷J·D·斯威尼S·N·耶德卫唐瀛
Owner ENTEGRIS INC
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