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Monolithic integrated graphene gas detection amplifier chip

An amplifying chip and monolithic integration technology, applied in the field of graphene gas detection amplifying chips, can solve the problems of inability to eliminate temperature effects, cumbersome heat treatment, and difficulty in controlling the patterned growth of graphene.

Active Publication Date: 2021-03-30
厦门中莘光电科技有限公司
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Problems solved by technology

[0005] In the prior art, the limitation of CVD preparation of graphene is that the preparation process requires a high temperature growth environment of about 1000°C and the subsequent heat treatment after the growth process is relatively cumbersome.
The existence of these limitations makes the CVD method to prepare graphene inefficient, and it is difficult to control the patterned growth of graphene.
[0006] Although, the laser chemical vapor deposition method (LCVD method) can effectively avoid the defects of the CVD method (the preparation process of the LCVD method selects a gaseous carbon source, uses CH4, H2 as the carbon source gas and carrier gas, and avoids the introduction of impurities in the experiment. , thus effectively improving the quality of graphene. However, the LCVD method still cannot eliminate the influence of temperature on the gas sensor. At the same time, the influence of light intensity on the accuracy of the sensor is inevitable.

Method used

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  • Monolithic integrated graphene gas detection amplifier chip
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Embodiment Construction

[0075] The present disclosure will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific implementation manners described here are only used to explain relevant content, rather than to limit the present disclosure. It should also be noted that, for ease of description, only parts related to the present disclosure are shown in the drawings.

[0076] It should be noted that, in the case of no conflict, the implementation modes and the features in the implementation modes in the present disclosure can be combined with each other. The technical solutions of the present disclosure will be described in detail below with reference to the accompanying drawings and in combination with implementation manners.

[0077] Unless otherwise specified, the illustrated exemplary embodiments / embodiments are to be understood as exemplary features providing various details of some manner in which the technical idea of ​​the pre...

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Abstract

The disclosure provides a monolithic integrated graphene gas detection and amplification chip, which comprises a graphene gas sensor for detecting the concentration of target gas and generating an analog electric signal based on the concentration of the target gas and a circuit module for processing the analog electric signal generated by the graphene gas sensor. The graphene gas sensor and the circuit module are arranged on the same chip, the graphene gas sensor comprises a first graphene sensor and a second graphene sensor, the first graphene sensor detects the concentration of target gas, and the second graphene sensor does not detect the concentration of the target gas.

Description

technical field [0001] The disclosure belongs to the technical field of gas sensors, and particularly relates to a single-chip integrated graphene gas detection amplification chip. Background technique [0002] With the continuous use of energy substances such as fossil fuels, the emission of polluting gases in the air has increased sharply. Therefore, real-time monitoring of polluting gases such as NO2 becomes extremely important. [0003] Gas sensors are the main tool for gas monitoring. In the prior art, the core components of the gas sensor are mainly metal oxides, which cause the gas sensor to have disadvantages such as high operating temperature, high power consumption, and large volume, which are not conducive to monolithic integration. The application potential of two-dimensional layered nanomaterials in gas sensors has attracted widespread attention due to their good electrical conductivity, large specific surface area, and high surface active sites. It has a bro...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
CPCG01N27/127
Inventor 程翔徐顺
Owner 厦门中莘光电科技有限公司
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