Bridge gan device and its preparation method

Abstract

The invention provides a bridge-type GaN device and a preparation method thereof. The preparation includes: providing a semiconductor substrate with a buffer structure and an epitaxial structure, forming a passivation layer on the epitaxial structure, preparing a source electrode and a drain electrode, and preparing a gate trench slots to form a bridge gate structure. The present invention increases the power density of the transistor by stacking multiple two-dimensional electron gas channels; through the design of the bridge gate structure, based on the gate buried in the epitaxial structure, the width of the two-dimensional electron gas is modulated by the lateral gate electric field To control the drain current, reduce the roll-off of the transconductance derived from electron velocity modulation, reduce the peak value of the transconductance, realize the flattening of the transconductance change, and improve the linearity of the device; the present invention is based on the suspended bridge gate The design of the electrode structure eliminates the high electric field area on the surface, and solves the current attenuation and collapse effects caused by it. The lack of contact with the top gate also eliminates the vertical electric field at the gate and drain terminals, greatly suppressing the reverse piezoelectric effect and improving reliability.

Description

technical field [0001] The invention belongs to the technical field of GaN device preparation, and in particular relates to a bridge-type GaN device and a preparation method thereof. Background technique [0002] Today, human production and life are inseparable from electricity, and with the improvement of people's awareness of energy conservation, power semiconductor devices with high conversion efficiency have become a research hotspot at home and abroad. Power semiconductor devices are widely used, such as household appliances, power converters and industrial controls, etc. Different power semiconductor devices are used under different rated voltages and currents. High Electron Mobility Transistor (HEMT, High Electron Mobility Transistor) is a hot spot of development at home and abroad, and has made breakthroughs in many fields, especially in high temperature, high power and high frequency, which has broad application prospects. [0003] Due to its excellent material pro...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a bridge-type GaN device and its preparation method, which are used to solve the problems of GaN device surface prone to defects, easy current collapse and GaN device withstand voltage, Problems such as power density and linearity are difficult to improve

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