High-temperature and high-pressure preparation method of high-strength transparent silicon nitride ceramics
A technology of silicon nitride ceramics, high temperature and high pressure, applied in the field of preparation of transparent silicon nitride ceramic materials, can solve the problems of grain coarsening, reduction of mechanical and optical properties of silicon nitride ceramics, large particle size, etc., and achieve simple process flow , shorten the preparation cycle and cost, optimize the effect of optical and mechanical properties
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Embodiment 1
[0018] α-Si 3 N 4 (accounting for 90% of the total mass, 1-10 microns) and β-Si 3 N 4 (accounting for 10% of the total mass, 100 nanometers) the mixture was removed at 200°C to remove moisture and adsorbed impurities, and after being formed by powder pressing with a hydraulic press, the sample was loaded into a synthesis cavity. Graphite heating is used in the assembly chamber, pyrophyllite is used as the pressure transmission medium, and hexagonal boron nitride is used to protect the chamber. The synthesis pressure is 5.5GPa, the synthesis temperature is 1400-2000°C, the temperature interval is 200°C, and the heat preservation and pressure holding time is 20 minutes. , after the heating was stopped, the sample was naturally cooled to room temperature and then the pressure was released. The X-ray diffraction results of silicon nitride samples prepared under different temperature conditions are shown in figure 1 , the relationship between hardness and load is shown in imag...
Embodiment 2
[0020] α-Si 3 N 4 (accounting for 90% of the total mass, 1-10 microns) and β-Si 3 N 4 (accounting for 10% of the total mass, 100 nanometers) the mixture was removed at 200°C to remove moisture and adsorbed impurities, and after being formed by powder pressing with a hydraulic press, the sample was loaded into a synthesis chamber. The assembly is heated by graphite, pyrophyllite is used as the pressure transmission medium, and the synthetic sample is protected by hexagonal boron nitride. The synthetic pressure is 3.5-5.5GPa, the pressure interval is 1.0GPa, the synthetic temperature is 1800°C, the heat preservation and pressure holding time is 20 minutes, and the heating is stopped. After the sample is naturally cooled to room temperature and then released, the X-ray diffraction results of silicon nitride samples prepared under different pressure conditions are shown in figure 2 , the relationship between hardness and load is shown in Figure 4 , the optical photographs of...
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