Oxide thin film transistor and preparation method thereof, OLED display panel and OLED display device
A technology of oxide thin film and thin film transistor, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electric solid-state device, etc. It can solve the problems of poor insulation and achieve the effects of ensuring insulation characteristics, not easy to disconnect, and simplifying the process
Pending Publication Date: 2020-08-18
BOE TECH GRP CO LTD +1
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[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an oxide thin film transistor and its preparation method, OLED display panel and device, which can avoid the relatively poor insulation of the oxide thin film transistor in the prior art. Poor defects to improve product yield
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preparation example Construction
[0048] Based on the same concept as the above oxide thin film transistor, the present application also provides a preparation method of an oxide thin film transistor, the preparation method may include the following steps:
[0049] Step S1, forming a gate insulating layer 20 on the substrate 10;
[0050] Step S2, forming a gate layer 30 on the gate insulating layer 20;
[0051] Step S3 , forming an interlayer insulating layer 40 covering the gate insulating layer 20 and the gate layer 30 on the substrate 10 , wherein the interlayer insulating layer 40 is an organic material layer.
[0052] It should be noted that the above steps may only be part of the steps of the method for manufacturing an oxide thin film transistor provided in the embodiment of the present application. For example, before forming the gate insulating layer 20 on the substrate 10, the substrate 10 ( Of course, the gate insulating layer 20 may also be directly formed on the existing substrate 10). A contact...
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The invention provides an oxide thin film transistor and a preparation method thereof, an OLED display panel and an OLED display device. The oxide thin film transistor comprises: a substrate, whereina gate insulating layer is arranged on the substrate; a gate layer which is arranged on the gate insulating layer; and an interlayer insulating layer which is arranged on the substrate and covers thegate insulating layer and the gate layer, wherein the interlayer insulating layer is an organic material layer. According to the oxide thin film transistor provided by the invention, the defects of cavities and the like caused by the disconnection of the ILD layer or poor step coverage in the prior art can be avoided.
Description
technical field [0001] The present invention relates to the technical field of display devices, in particular to an oxide thin film transistor and a preparation method thereof, an OLED display panel and a device. Background technique [0002] Organic light emitting diode (Organic Light Emitting Display, hereinafter referred to as OLED) display device has many advantages such as self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast, and can realize flexible display and large-area full-color display. It is recognized by the industry as the most promising display device. [0003] In recent years, transistors made of oxide semiconductor thin films (oxide thin film transistors, Oxide TFT) have received more and more attention and attention because they can meet the current characteristic requirements and the process is easy to control. However, in the process of making oxide thin film transistors in related technologi...
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IPC IPC(8): H01L29/786H01L29/06H01L21/336H01L27/32
CPCH01L29/7869H01L29/0649H01L29/66969H10K59/12
Inventor 崔容豪玄丽燕李媛仇翠红
Owner BOE TECH GRP CO LTD