Monocrystalline silicon wafer cleaning method

A single crystal silicon wafer, silicon wafer technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problem that the cleaning process cannot be applied to single crystal silicon wafer cleaning

Pending Publication Date: 2020-09-01
江苏美科太阳能科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to overcome the defect that the existing cleaning process cannot be applied to the cleaning of single crystal silicon wafers, the present invention improves the original polycrystalline silicon wafer cleaning process and provides a single crystal silicon wafer cleaning method

Method used

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  • Monocrystalline silicon wafer cleaning method

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Effect test

Embodiment 1

[0020] Such as figure 1 As shown, the monocrystalline silicon wafer cleaning method of the present invention sequentially includes the steps of overflow pre-cleaning, alkali cleaning, primary overflow rinsing, hydrogen peroxide soaking, secondary overflow rinsing, slow heating, drying, and natural cooling at room temperature, specifically as follows:

[0021] Overflow pre-cleaning: The overflow speed of single crystal is required to be 220L / Hour. The function is to pre-clean the surface of the silicon wafer after degumming, and simply remove large impurities on the surface of the silicon wafer such as glue, degumming agent, and lactic acid;

[0022] Alkali cleaning: Use solid alkali (purified grade KOH), surfactant, and pure water to prepare an alkaline cleaning mixed solution (KOH) with a concentration of 3%, and use three ultrasonic alkaline cleaning tanks to clean the silicon wafers in sequence. 50°C;

[0023] One overflow rinse: overflow speed 300L / Hour. The function is...

Embodiment 2

[0030] The cleaning method of monocrystalline silicon wafers includes pre-cleaning, alkaline cleaning, primary overflow rinsing, hydrogen peroxide immersion, secondary overflow rinsing, slow heating, drying, and natural cooling at room temperature. The details are as follows:

[0031] Overflow pre-cleaning: The overflow speed of single crystal is required to be 250L / Hour. The function is to pre-clean the surface of the silicon wafer after degumming, and simply remove residual substances such as glue, degumming agent, lactic acid, etc.;

[0032] Alkali cleaning: Use solid alkali (purified grade KOH), surfactant, and pure water to prepare an alkaline cleaning mixed solution (KOH) with a concentration of 4%, and use three ultrasonic alkaline cleaning tanks to clean the silicon wafers in sequence. 55°C;

[0033] One-time overflow rinsing: the overflow speed is 210L / Hour. The function is to rinse the mixed solution (KOH / surfactant) after alkali washing to reduce the chemical resid...

Embodiment 3

[0040] The cleaning method of monocrystalline silicon wafers includes pre-cleaning, alkaline cleaning, primary overflow rinsing, hydrogen peroxide immersion, secondary overflow rinsing, slow heating, drying, and natural cooling at room temperature. The details are as follows:

[0041] Overflow pre-cleaning: the overflow speed of single crystal is required to be 230L / Hour. The function is to pre-clean the surface of the silicon wafer after degumming, and simply remove residual substances such as glue, degumming agent, lactic acid, etc.;

[0042] Alkali cleaning: Use solid alkali (purified grade KOH), surfactant, and pure water to prepare an alkaline cleaning mixed solution (KOH) with a concentration of 5%, and use multiple ultrasonic alkaline cleaning tanks to clean the silicon wafers in sequence. The temperature requirement is at 60°C;

[0043] One-time overflow rinsing: the overflow speed is 350L / Hour. The function is to rinse the mixed solution (KOH / surfactant) after alkali...

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Abstract

The invention discloses a monocrystalline silicon wafer cleaning method which comprises the following steps of cleaning by using alkali liquor mixed liquor, hydrogen peroxide and the like, and basically removing the large impurity residues on the surface of a silicon wafer through pre-cleaning; removing the particle impurities, metal ions and silicon powder residues on the surface of the silicon wafer through multiple times of alkali washing and an ultrasonic and cleaning agent mode, then removing the cleaning agent residues preliminarily through one-time rinsing to reduce the influence of thecleaning agent residues on the subsequent hydrogen peroxide; removing the residues of organic matters on the surface of the silicon wafer by utilizing hydrogen peroxide; and finally, removing the residues of the previous chemical washing, hydrogen peroxide, alkali and silicon powder through multiple times of overflow rinsing. According to the cleaning method, the temperature and the concentrationof the cleaning liquid are controlled, so that the generation rate of single crystal dirt can be effectively reduced, and meanwhile, the subsequent process is not influenced.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic production and relates to a method for cleaning a single crystal silicon wafer. Background technique [0002] The rapid development of monocrystalline silicon wafer production capacity has rapidly squeezed the proportion of the original polycrystalline production capacity, which has adapted to the current diversified development of various varieties. Single crystal has higher requirements and more complex process. At the same time, the texturing requirements of single crystal cells have stricter requirements on the front cleaning process. Therefore, the original polycrystalline silicon wafer cleaning process can no longer be adapted to single crystal silicon wafer cleaning. Contents of the invention [0003] In order to overcome the defect that the existing cleaning process cannot be applied to single crystal silicon wafer cleaning, the present invention improves the original polycrystallin...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L31/18
CPCH01L21/02043H01L31/1804Y02P70/50
Inventor 魏泽武王艺澄王友
Owner 江苏美科太阳能科技股份有限公司
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