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Cleaning method and cleaning device of laser device graphite tray

A technology for graphite trays and cleaning devices, applied in cleaning methods and appliances, chemical instruments and methods, separation methods, etc., can solve problems such as reducing production costs, damage, and reducing dependence on MOCVD equipment, so as to reduce production costs and prolong use The effect of increasing the lifespan and the reuse rate

Inactive Publication Date: 2020-09-04
潍坊华光光电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at damage to the flatness of the tray due to physical treatment and knocking, in-situ corrosion is likely to cause pipeline blockage and equipment utilization rate, using a high-temperature baking pan furnace to feed a mixed gas (nitrogen-hydrogen mixture) at different temperatures and pressures, which not only solves the problem of flatness of the tray It also reduces the dependence on MOCVD equipment, reduces the impact on graphite disks, prolongs the service life of graphite disks, and reduces production costs

Method used

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  • Cleaning method and cleaning device of laser device graphite tray

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A cleaning method for a laser graphite tray, the steps are as follows:

[0032] (1) Open the baking pan furnace and put the laser graphite tray into the baking pan furnace, with the side with the growth material facing the heating wire of the baking pan furnace;

[0033] (2) Close the pan oven and vacuumize to 0.6mbar;

[0034] (3) After the vacuum reaches 0.6mbar, the oven is heated;

[0035] (4) The baking pan furnace is first raised from room temperature to 1200 ° C, and the heating time is 130 minutes; while heating up, a nitrogen-hydrogen mixture with a hydrogen content of 35% is added to accelerate the decomposition of the surface material of the graphite disc during the heating period;

[0036] (5) After rising to 1200°C, keep the temperature constant, fill the mixed gas for 10 minutes, and make the pressure reach 20mbar; after reaching the pressure, stop the inflation, and keep warm for 30 minutes; then vacuumize to the pressure of 0.6mbar; in this step, fill ...

Embodiment 2

[0041] A cleaning method for a laser graphite tray, the steps are as follows:

[0042] (1) Open the baking pan furnace and put the laser graphite tray into the baking pan furnace, with the side with the growth material facing the heating wire of the baking pan furnace;

[0043] (2) Close the baking pan furnace and vacuumize to 0.01mbar;

[0044] (3) After the vacuum degree reaches 0.01mbar, the baking pan furnace is heated;

[0045] (4) The baking pan furnace is first raised from room temperature to 1200 ° C, and the heating time is 60 minutes; while heating up, a nitrogen-hydrogen mixture with a hydrogen content of 5% is added to accelerate the decomposition of the surface material of the graphite disc during the heating period;

[0046] (5) After rising to 1200°C, keep the temperature constant, fill the mixed gas for 10 minutes, and make the pressure to 1mbar; after reaching the pressure, stop the inflation, and keep it warm for 30 minutes; then vacuumize to the pressure of...

Embodiment 3

[0051] A kind of cleaning method of laser graphite pallet, its step is as described in embodiment 2, difference is,

[0052] (1) Open the baking pan furnace and put the laser graphite tray into the baking pan furnace, with the side with the growth material facing the heating wire of the baking pan furnace;

[0053] (2) Close the baking pan furnace and vacuumize to 10mbar;

[0054] (3) After the vacuum reaches 10mbar, the oven is heated;

[0055] (4) The baking pan furnace is first raised from room temperature to 1200°C, and the heating time is 240 minutes; while heating up, a nitrogen-hydrogen mixture with a hydrogen content of 50% is added to accelerate the decomposition of the surface material of the graphite disc during the heating period;

[0056] (5) After rising to 1200°C, keep the temperature constant, fill the mixed gas for 30 minutes, and make the pressure reach 100mbar; after reaching the pressure, stop the inflation and keep warm for 120 minutes; then vacuumize to ...

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Abstract

The invention relates to a cleaning method and cleaning device of a laser device graphite tray, and belongs to the technical field of semiconductor cleaning. The cleaning method and cleaning device mainly aim at the defects of the existing tray treatment technology, and the laser device graphite tray is treated through an ovenware furnace. Ovenware furnace pressure dividing, ovenware furnace temperature increase, inputting of mixed gas, vacuumizing, temperature keeping, returning to ordinary pressure and taking out of the graphite tray are carried out. The treatment pressure time and the proportion of mixed gas are controlled, and therefore growth materials on the surface of the tray are treated under the condition that the tray is not destroyed, the yield of a laser device epitaxial waferis increased, the influence of graphite tray impurities on the performance of laser devices is reduced, the tray can be repeatedly used, and spare part waste is reduced.

Description

technical field [0001] The invention relates to a method for reusing a graphite tray for a laser by using a baking pan oven to clean it, and belongs to the technical field of semiconductors. Background technique [0002] Graphite has various advantages such as high temperature resistance, small thermal expansion coefficient, good thermal stability, good strength at high temperature, good thermal conductivity, and easy processing. It is widely used in heating bases of various heating equipment, but graphite materials are wear-resistant Poor, it is easy to produce graphite powder, and it is easy to release adsorption gas under vacuum, which restricts the use of graphite. Therefore, when using it under high temperature and vacuum, the graphite substrate must be coated. The growth of epitaxial wafers is mainly realized by the graphite plate carrying the substrate, and the graphite plate for epitaxial growth is generally polished and covered. The growth material is deposited on ...

Claims

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Application Information

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IPC IPC(8): B08B7/00B08B9/08B01D46/00B01D53/78
CPCB01D46/00B01D53/78B08B7/0085B08B9/08
Inventor 于军王朝旺张雨张新邓桃徐现刚
Owner 潍坊华光光电子有限公司