Semiconductor laser, bar and manufacturing method

Abstract

The invention discloses a semiconductor laser, a bar and a manufacturing method. The semiconductor laser comprises a substrate, an epitaxial structure covering the upper surface of the substrate, a first insulating layer, a first electrode, and a second insulating layer. The first insulating layer covers the upper surface of the epitaxial structure and is provided with a through current injectionwindow in a thickness direction; the first electrode covers the upper surface of the first insulating layer and the upper surface of the exposed part of the epitaxial structure through the current injection window; The second insulating layer covers the upper surface of the first electrode at the position corresponding to the current injection window; and the outer contour of the projection on thefirst insulating layer corresponds to the edge of the current injection window, so that the second insulating layer can partially or completely counteract the stress generated by the first insulatinglayer on the epitaxial structure at the edge of the current injection window. Therefore,, the influence of stress introduced in the technological process on the semiconductor material can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser, a bar and a manufacturing method. Background technique [0002] The size of the horizontal divergence angle and the intensity distribution of the spot are one of the important factors affecting the coupling efficiency of the fiber. Photoelastic waveguiding is an important light-transmitting property in semiconductor lasers in which an insulating layer is deposited to limit current injection. Under the current injection window of a semiconductor laser, a small change in the refractive index of the active region will lead to the formation of a photoelastic waveguide, and the change in the refractive index in this region is affected by the stress field distribution of the semiconductor material under the current injection window. Since III-V semiconductor materials generally have a large photoelastic coefficient, the introduction of a small stres...

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Problems solved by technology

[0006] Therefore, after the current injection window is formed in the semiconductor laser using the silicon nitride insulating layer, the stress introduced at the edge of the current injection window increases the refractive index of the semiconductor material corresponding to this area, forming a new positive waveguide, causing the laser to flow in the resonator During medium oscillation, part of the light is concentrated here, and side peaks appear on both sides of the far-field horizontal divergence angle symmetry, resulting in excessive divergence angle and uneven distribution of spot intensity.

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