Growth method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer

Abstract

The invention provides a growth method of a light emitting diode epitaxial wafer and the light emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growth method comprises the following steps: putting a sapphire substrate into a reaction chamber; introducing a reaction gas into the reaction chamber, and forming a GaN crystal nucleus containing In atoms in a partial region of the sapphire substrate; at least one composite layer grows on the GaN crystal nucleus, the GaN crystal nucleus grows to form a buffer layer, and each composite layer comprises an InGaNsub-layer and a GaN sub-layer growing on the InGaN sub-layer; and sequentially growing an N-type GaN layer, an active layer and a P-type GaN layer on the buffer layer to form an epitaxial wafer, wherein the active layer comprises InGaN quantum wells and GaN quantum barriers which are alternately stacked. By forming the GaN crystal nucleus which is large in size and stable, stress generated by lattice mismatch between the sapphire substrate and the GaN-based material is effectively counteracted.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a method for growing an epitaxial wafer of a light emitting diode and the epitaxial wafer of a light emitting diode. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] The epitaxial wafer is the primary product in the LED manufacturing process. In related technologies, LED epitaxial wafers include a sapphire substrate, a GaN buffer layer, an N-type GaN layer, an active layer in which InGaN quantum wells and...

AI Technical Summary

Problems solved by technology

[0004] There is a large lattice mismatch between the sapphire substrate and the GaN-based material, and the line defects generated by the lattice mismatch will extend to the active layer, affecting the recombination of electrons and holes and reducing the luminous efficiency of LEDs

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