Method for determining silicon nitride film in HIT solar battery
A silicon nitride thin film and solar cell technology, which is applied in the preparation of test samples, color/spectral characteristic measurement, etc., can solve the problem of not being sure whether the surface of the TCO layer is covered with a silicon nitride thin film, etc., to improve the leaching rate effect
Active Publication Date: 2020-09-11
HOHAI UNIV CHANGZHOU
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[0004]
The purpose of the present invention is to provide a method for determining a silicon nitride film in a HIT solar cell, so as to solve the problem in the prior art that it is impossible to determine whether the surface of the TCO layer is covered with a layer of silicon nitride film for HIT solar cells with different structures. question
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[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0026] An embodiment of the present invention provides a method for determining a silicon nitride film in a HIT solar cell, including:
[0027] (1) Select two HIT solar cells, respectively the first HIT solar cell and the second HIT solar cell, weigh the first HIT solar cell and the second HIT solar cell with a laboratory non-metallic special balance The masses are 5.263g and 2.8g respectively, and then crushed to obtain the first battery fragment and the seco...
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The invention discloses a method for determining a silicon nitride film in an HIT solar battery, and the method comprises the steps: selecting two HIT battery pieces, weighing, and crushing; carryingout acid leaching on first battery fragments to obtain a first acid leaching solution, and measuring the volume of the first acid leaching solution; putting second battery fragments into a hydrofluoric acid solution for reaction, then performing acid leaching to obtain a second acid leaching solution, and measuring the volume of the second acid leaching solution; preparing an indium standard solution, measuring the absorbance of the indium standard solution, and drawing a standard curve of the absorbance and the indium concentration; respectively measuring the absorbance of the first acid leaching solution and the second acid leaching solution, and calculating to obtain the indium ion concentrations of the first acid leaching solution and the second acid leaching solution; calculating to obtain the mass fraction of indium in the first HIT battery piece and the second HIT battery piece; and judging a silicon nitride film in the HIT battery. By determining whether the silicon nitride thin film exists in the HIT battery or not, the recovery rate of the metal indium in the HIT battery is increased.
Description
technical field [0001] The invention relates to the technical field of photovoltaic material recycling, in particular to a method for determining a silicon nitride film in a HIT solar cell. Background technique [0002] Common HIT (Heterojunction with intrinsic Thinlayer) solar cells include single-sided HIT solar cells, double-sided HIT solar cells and back-contact HIT solar cells. Among them, the most typical HIT solar cell is a double-sided HIT solar cell based on an n-type substrate developed by Japan Sanyo. Its structure is based on an N-type single crystal silicon wafer, and N-type intrinsic Amorphous silicon film, P-type amorphous silicon film, TCO (transparent conductive oxide) transparent conductive oxide film, silver gate electrode. [0003] In recent years, the structure of HIT solar cells has been continuously improved, and the efficiency has been continuously improved. However, for HIT solar cells with different structures, it cannot be determined whether a la...
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IPC IPC(8): G01N1/28G01N21/33
CPCG01N1/28G01N21/33
Inventor 于书魁王磊刘明李韫良常浩然张臻
Owner HOHAI UNIV CHANGZHOU