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Curing and passivating integrated furnace for use in solar cell production

A solar cell and integrated technology, applied in the direction of incinerators, furnaces, furnace materials, etc., can solve the problems of high cost, inconvenient on-site assembly and subsequent maintenance, battery handling damage, etc., to ensure solidification, reduce equipment manufacturing costs and floor space demand, the effect of simplifying the preparation process

Pending Publication Date: 2020-10-02
苏州炳日科技有限公司
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  • Description
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  • Application Information

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Problems solved by technology

In order to achieve continuous production and avoid battery handling damage, the industry also discloses a curing passivation equipment, which integrates the existing passivation furnace at the back end of the curing furnace, but the equipment occupies a large area and costs high, which is not convenient for on-site Assembly and subsequent maintenance

Method used

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  • Curing and passivating integrated furnace for use in solar cell production
  • Curing and passivating integrated furnace for use in solar cell production
  • Curing and passivating integrated furnace for use in solar cell production

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Embodiment Construction

[0024] The present invention will be described in detail below with reference to the embodiments shown in the accompanying drawings. However, this embodiment does not limit the present invention, and any structural, method, or functional changes made by those skilled in the art according to this embodiment are included in the protection scope of the present invention.

[0025] ginseng figure 1 As shown, the curing and passivation integrated furnace 100 provided in the present application includes a furnace body 1 and a transmission channel 101 formed in the furnace body 1 and extending along the length direction of the furnace body 1 .

[0026] combine Figure 2 to Figure 4 As shown, the body of furnace 1 is provided with a drying zone 102, a solidification and passivation zone 103 and a cooling zone 104 arranged successively along its length direction, and the drying zone 102, the solidification and passivation zone 103 and the cooling zone 104 can be set to be assembled fr...

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Abstract

The invention provides a curing and passivating integrated furnace for use in solar cell production. The curing and passivating integrated furnace comprises a furnace body, a transport channel, a curing and passivating area and a light source system, wherein the transport channel is formed in the furnace body, and extends along the length direction of the furnace body; the curing and passivating area is formed in the same segment of the furnace body; and the light source system is arranged in the curing and passivating area, and can be taken as a curing heat source and an irradiation light source at the same time. Through adoption of the curing and passivating integrated furnace, the curing and passivating processes of solar cells are realized at the same time through the light source system arranged in the curing and passivating area; the process is simplified; the curing and passivating effects are ensured; and the manufacturing cost and floor area of equipment are reduced. The curing and passivating integrated furnace is particularly suitable for the production and preparation of HJT cells.

Description

technical field [0001] The invention relates to the technical field of photovoltaic production, in particular to an integrated curing and passivation furnace for solar cell production. Background technique [0002] Compared with other renewable energy sources, solar power generation technology has many outstanding advantages. In comparison, crystalline silicon solar cells are still the most widely used photovoltaic products in domestic and foreign markets due to their low cost of raw materials and relatively mature technology. As far as crystalline silicon solar cells are concerned, their industrialization technology is relatively mature, but the requirements for cell conversion efficiency and stability in domestic and foreign markets are still improving. [0003] The HJT battery is mainly to deposit the intrinsic α-Si:H layer on the front / back side of the n-type silicon wafer, and then deposit the p-type α-Si:H layer and the n-type α-Si:H layer respectively, and then carry...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): F27B9/12F27B9/24F27B9/36F27B9/30F27D17/00F23G7/06H01L31/18
CPCF27B9/12F27B9/2407F27B9/243F27B9/36F27B9/30F27D17/00F23G7/06H01L31/1864H01L31/1868F27B2009/126F27M2003/08Y02E10/50
Inventor 刘欢张海森王义方胡炜
Owner 苏州炳日科技有限公司