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Maskless scanning exposure method based on UV-LED photoetching light source and photoetching machine

A UV-LED and scanning exposure technology, applied in the semiconductor field, can solve the problems of limited exposure area and low efficiency

Inactive Publication Date: 2020-10-20
BEIJING U PRECISION TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the efficiency of this method is low and the exposure area is limited

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  • Maskless scanning exposure method based on UV-LED photoetching light source and photoetching machine
  • Maskless scanning exposure method based on UV-LED photoetching light source and photoetching machine
  • Maskless scanning exposure method based on UV-LED photoetching light source and photoetching machine

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Embodiment Construction

[0030] Embodiments of the present invention will be described below with reference to the accompanying drawings. Those skilled in the art would recognize that the described embodiments can be modified in various ways or combinations thereof without departing from the spirit and scope of the invention. Accordingly, the drawings and description are illustrative in nature and not intended to limit the scope of the claims. Also, in this specification, the drawings are not drawn to scale, and like reference numerals denote like parts.

[0031] figure 1 It is a schematic flow chart of the maskless scanning exposure method based on UV-LED lithography light source according to the present invention, as figure 1 As shown, the maskless scanning exposure method based on the UV-LED lithography light source described in the present invention can be used for the exposure of a maskless lithography machine, including:

[0032] S1, using a UV-LED light source 1 as a photolithography light s...

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Abstract

The invention discloses a maskless scanning exposure method based on a UV-LED photoetching light source and a photoetching machine, and the method comprises the steps: employing the UV-LED light source as the photoetching light source, and forming a dot-matrix exposure field; wherein an emergent light beam of the UV-LED light source forms a plurality of exposure point areas arranged in a dot-matrix manner on the surface of the wafer through the micro-lens array, and the wafer is mounted on the wafer workpiece table; during exposure, controlling the wafer workpiece table \ by the control systemto carry out stepping scanning motion, and completing exposure of the whole wafer. According to the invention, through stepping scanning motion of the wafer workpiece table, an infinite exposure areacan be realized, and the exposure efficiency can be improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a photolithography machine and an exposure method thereof. Background technique [0002] Exposure is an essential process in microfabrication and a key step in photolithography. In the prior art, computer-controlled high-precision laser beam scanning is usually used to directly expose and write the designed pattern on the photoresist, so as to transfer the designed pattern to the mask. However, this method has low efficiency and limited exposure area. Contents of the invention [0003] In view of the above problems, the object of the present invention is to provide a maskless scanning exposure method based on UV-LED photolithography light source, comprising: [0004] Use UV-LED light source as photolithography light source to form dot matrix exposure field; [0005] The outgoing beam of the UV-LED light source forms a plurality of exposure point areas arranged...

Claims

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/2004G03F7/70358G03F7/70725
Inventor 朱煜杨开明
Owner BEIJING U PRECISION TECH
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