Three-dimensional ferroelectric memory and preparation method thereof

Abstract

The invention discloses a three-dimensional ferroelectric memory and a preparation method thereof. The three-dimensional ferroelectric memory comprises a substrate (1) and a conductive layer (2) arranged on the substrate (1), a laminated structure arranged on the conductive layer (2) comprising a plurality of horizontal isolation layers (3) and control gate electrodes (4) which are arranged in anoverlapping manner; a plurality of groove holes (11) vertically penetrating through the laminated structure, and the groove bottoms of the groove holes (11) being embedded into the conductive layer (2); a first dielectric layer (6), a ferroelectric film layer (7), a second dielectric layer (8), a channel layer (9) and a filling layer (10) being sequentially laid on the side wall and the groove bottom of the groove hole (11) so as to form a plurality of groove type storage unit strings (5). Storage units can be formed on the two sides of each groove type storage unit string (5), more compact wiring can be obtained, and higher-density integration can be achieved. And the groove type memory is prepared by sequentially depositing required materials without etching, so that the quality of the deposited materials is not influenced, and the reliability of the memory can be ensured.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a three-dimensional ferroelectric memory and a preparation method thereof. Background technique [0002] Transistor type ferroelectric memory - ferroelectric field effect transistor (FeFET) is to replace the gate dielectric layer in field effect transistor (MOSFET) with ferroelectric thin film material, and control the conduction of channel current by changing the polarization direction of ferroelectric thin film material Pass and cut off, so as to realize the storage of information. FeFET memory has the advantages of non-volatility, low power consumption, fast read and write speed, etc., and the unit structure is simple, and the theoretical storage density is large. Therefore, FeFET memory is considered to be one of the most potential new memory. [0003] However, for a long time, the actual storage density of FeFET memory is quite different from the theoretical value, which al...

AI Technical Summary

Problems solved by technology

However, the three-dimensional integration technology that can guarantee high-density integration, low-cost production and high reliability at the same time remains to be broken through

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