Film bulk acoustic resonator and manufacturing process thereof

A thin-film bulk acoustic wave and manufacturing process technology, applied in electrical components, impedance networks, etc., can solve problems such as taking away energy, affecting device performance, and difficult to suppress parasitic oscillations

Active Publication Date: 2020-10-23
HANGZHOU JWL TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the technical problem that the shear wave at the resonant region above the resonator cavity in the prior art is easy to leak from the edge of the resonator and take away energy, it is diffi

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  • Film bulk acoustic resonator and manufacturing process thereof
  • Film bulk acoustic resonator and manufacturing process thereof
  • Film bulk acoustic resonator and manufacturing process thereof

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Embodiment Construction

[0038] The application will be further described in detail below with reference to the drawings and embodiments. It can be understood that the specific embodiments described here are only used to explain the related invention, but not to limit the invention. In addition, it should be noted that, for ease of description, only the parts related to the relevant invention are shown in the drawings.

[0039] It should be noted that the embodiments in the application and the features in the embodiments can be combined with each other if there is no conflict. Hereinafter, the present application will be described in detail with reference to the drawings and in conjunction with embodiments.

[0040] figure 1 Shows a cross-sectional view of a thin film bulk acoustic resonator according to an embodiment of the present invention, such as figure 1 As shown, the thin film bulk acoustic wave resonator includes a substrate 101, a support layer 102, a bottom electrode 103, a piezoelectric layer 1...

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Abstract

A film bulk acoustic wave resonator comprises a bottom electrode layer, a piezoelectric layer and a top electrode layer which are arranged on the upper portion of a substrate where an acoustic wave reflection structure is located, and the portion, corresponding to the boundary of the acoustic wave reflection structure, of the piezoelectric layer is subjected to depolarization treatment to form a depolarization part. The invention further discloses a manufacturing process of the film bulk acoustic resonator. The manufacturing process comprises the following steps: manufacturing the bottom electrode layer on the substrate on which the acoustic reflection structure is formed or to be formed so as to cover the acoustic reflection structure; manufacturing a piezoelectric layer on the bottom electrode layer; carrying out depolarization processing on the part, corresponding to the boundary of the sound wave reflection structure, of the piezoelectric layer to form a depolarization part; and manufacturing a top electrode layer on the piezoelectric layer. According to the film bulk acoustic resonator and the manufacturing process thereof, transverse waves can be prevented from taking away energy from a resonance region at the upper part of the cavity of the resonator, so that the mechanical vibration strength of the resonance region is ensured, parasitic oscillation is inhibited, and theQ value of the resonator is improved.

Description

Technical field [0001] This application relates to the field of communication devices, and mainly relates to a thin-film bulk acoustic resonator and its manufacturing process. Background technique [0002] With the increasing congestion of the electromagnetic spectrum and the increase in frequency bands and functions of wireless communication equipment, the electromagnetic spectrum used in wireless communication has grown rapidly from 500MHz to above 5GHz, so there is a demand for high performance, low cost, low power consumption, and small size RF front-end modules. Also growing day by day. The filter is one of the RF front-end modules, which can improve the transmission and reception of the signal. It is mainly composed of multiple resonators connected through a topological network structure. Fbar (Thin film bulk acoustic resonator) is a bulk acoustic wave resonator. The filter composed of it has the advantages of small size, strong integration ability, high quality factor Q d...

Claims

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Application Information

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IPC IPC(8): H03H3/02H03H9/02H03H9/13H03H9/17
CPCH03H3/02H03H9/02125H03H9/02H03H9/131H03H9/174H03H2003/023H03H2003/028H03H2009/02173H03H9/02118H03H9/02015H03H9/02047H03H9/0561H03H9/605H03H2003/021H03H2003/025H03H9/587H03H9/588H03H9/589H03H9/175H03H9/133H03H9/173H03H9/54
Inventor 李林萍盛荆浩江舟
Owner HANGZHOU JWL TECH INC
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