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A kind of u-w-n ternary film and its preparation method and application

A U-W-N, thin-film technology, applied in nuclear reactors, fusion reactors, thermonuclear fusion reactors, etc., can solve problems such as limited ability to suppress stimulated Brillouin scattering, complex uranium black cavity structure layer, and easy excitation of epithermal electrons, etc. Effects of suppressing M-band hard X-ray and epithermal electron yield, protecting uranium black cavity conversion layer, good interfacial adhesion and chemical compatibility

Active Publication Date: 2022-06-28
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

[0003] The purpose of the invention is to solve the complex structure of the existing uranium black cavity, the UN x The control range of N content in the descattering / protective layer is limited, the ability to suppress stimulated Brillouin scattering is limited, and the M of the Au protective layer is easy to be excited by hard X-rays and epithermal electrons. A U-W-N ternary film and its Preparation method and application

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specific Embodiment approach 1

[0008] Embodiment 1: This embodiment is a U-W-N ternary film, which is characterized in that the mass fraction of N in the U-W-N ternary film is x%, and 0<x≤66.7, and the mass fraction of W is y%, and 0< y≤10%, the remainder is U, and the thickness of the U-W-N ternary film is 100nm-700nm.

specific Embodiment approach 2

[0009] Embodiment 2: This embodiment is a preparation method of a U-W-N ternary thin film, which is specifically completed according to the following steps: using a DC reactive magnetron sputtering co-deposition method, using Ar as a protective gas, and using N 2 As the reaction gas, the U-target and the W target are used for magnetron sputtering deposition through a DC power supply to obtain a U-W-N ternary thin film. The purity of the U target is >99%, the purity of the W target is >99.99%, and the Ar Purity>99.9999%, the N 2 The purity of >99.9999%.

specific Embodiment approach 3

[0010] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the specific process of the DC reactive magnetron sputtering co-deposition method is as follows:

[0011] 1. Install 1 to 9 mandrels on the rotating support table, adjust the distance between the U target and the center of the mandrel to be 10cm to 20cm, and the normal line of the U target center and the plane of the mandrel form an angle of 45°; adjust the W target and the mandrel. The distance between the center of the mandrel is 10cm to 20cm, and the normal line of the center of the W target surface and the plane where the mandrel is located forms an included angle of 45°; the normal lines of the U target and the W target and the plane where the mandrel is located are symmetrically distributed;

[0012] 2. The vacuum degree of the deposition chamber can reach 1×10 by vacuuming by mechanical pump and molecular pump -8 Pa~1×10 -6 Pa, then filled with protective gas and reaction gas, the gas ...

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Abstract

A U-W-N ternary thin film and its preparation method and application, which belong to the field of laser fusion engineering technology, and specifically relate to a U-W-N ternary thin film with black cavity descattering and protective functions and its preparation methods and applications. The purpose of the invention is to solve the complex structure of the existing uranium black cavity, the UN x The control range of N content in the dispersion / protection layer is limited, the ability to suppress stimulated Brillouin scattering is limited, and the M band of the Au protection layer is easily excited by hard X-rays and epithermal electrons. The mass fraction of N in the U-W-N ternary film is x%, and 0<x≤66.7, the mass fraction of W is y%, and 0<y≤10%, and the balance is U. Preparation method: DC reactive magnetron sputtering co-deposition method, with N 2 As the reaction gas, the U-W-N ternary film was obtained by magnetron sputtering deposition with U target and W target through DC power supply. U‑W‑N ternary film is applied on the black cavity as a dispersion / protection layer.

Description

technical field [0001] The invention belongs to the technical field of laser fusion engineering, and in particular relates to a U-W-N ternary film with black cavity dissipation and protection functions, and a preparation method and application thereof. Background technique [0002] In order to realize the globally challenging scientific engineering of laser-driven controlled thermonuclear fusion (ICF), people have been looking for black cavity materials with better comprehensive performance of conversion efficiency and radiation field characteristics. Theoretical analysis and experimental research show that compared with the traditional Au black cavity, using metal U with higher radiation and opacity as the cavity wall material of the black cavity can reduce the energy loss by about 17%, and can effectively suppress the M-band hard X. Ray and Epithermal Electron Yield (O. Jones, J. Schein, M. Rosen, et al. Phys. Plasmas, 2007, 14, 056311). However, due to the active chemica...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/35G21B1/11
CPCC23C14/0641C23C14/0688C23C14/352C23C14/0036G21B1/11Y02E30/10
Inventor 何智兵易泰民宛悦杜凯郑凤成李宁邢丕峰杨蒙生柯博何小珊王丽熊郭亮
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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