Czochralski monocrystalline silicon growth furnace

Abstract

The invention relates to the technical field of czochralski monocrystalline silicon, and discloses a czochralski monocrystalline silicon growth furnace which comprises a fixed box and a pyrometer. A heat preservation cylinder I is fixedly mounted at the left part of an inner cavity of the fixed box, a heating element is fixedly mounted on the inner wall of the heat preservation cylinder I, and a seed crystal is fixedly mounted on the right side of the top of the fixed box. Through the setting of the growth box, the melting of the polycrystalline silicon is separated from the pulling place of the monocrystalline silicon body; the polycrystalline silicon is continuously melted through the quartz crucible to form a melt to provide a raw material for pulling the monocrystalline silicon body from the interior of the growth box; the quality of the monocrystalline silicon body is prevented from being reduced due to non-uniform thermal field in the quartz crucible; the growth interface temperature in the growth box can be kept within a certain range, and the temperature control difficulty is reduced; meanwhile, the quartz crucible and the growth box are arranged to ensure the sufficiency of raw materials; and through the arrangement of a rotating device, the number of single crystal silicon bodies pulled at a time is increased, and the production efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of Czochralski single crystal silicon, in particular to a Czochralski method single crystal silicon growth furnace. Background technique [0002] Monocrystalline silicon is a kind of semiconductor material, which is generally used in the manufacture of integrated circuits and other electronic components. There are two types of monocrystalline silicon growth techniques: one is the zone melting method, and the other is the Czochralski method. The commonly used method, the Czochralski method for growing single crystal silicon is shown in the attached Figure 4 Shown: Put the high-purity polysilicon raw material into the quartz crucible 5, then pass argon gas through the argon gas input port 10 and use a vacuum pump to form a low pressure, under this condition, the polysilicon is heated and melted, and at the same time, the sling 7 will be used. The seed crystal 8 with a specific growth direction is in contact w...

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Problems solved by technology

[0004] The invention provides a Czochralski method monocrystalline silicon growth furnace, which has the advantages of large production capacity, good quality and low control difficulty, and solves the above-mentioned background technical problems

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