Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of acoustic wave resonator and preparation method thereof

An acoustic wave resonator and a dielectric layer technology, applied in the field of resonators, can solve the problems of limited practicality, high process difficulty, corrosion, etc., and achieve the effect of reducing the preparation cost and the process difficulty

Active Publication Date: 2021-05-25
SHANGHAI NOVEL SI INTEGRATION TECH CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in addition to defining interdigital electrodes, this method also needs to form a cavity structure under the piezoelectric film like a bulk acoustic wave resonator, so the preparation process is more complicated, which limits its practicality to a certain extent.
[0004] The existing method of forming a cavity structure under the piezoelectric film is to pre-set a sacrificial layer under the piezoelectric film, and then open holes to etch the sacrificial layer after the device is fabricated. This method is relatively complicated.
The process is more difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of acoustic wave resonator and preparation method thereof
  • A kind of acoustic wave resonator and preparation method thereof
  • A kind of acoustic wave resonator and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0041] figure 1 It is a schematic flow chart of a method for manufacturing an acoustic wave resonator provided by the present invention, and may include more or fewer operating steps based on routine or non-creative work. The order of the steps listed is only one of the execution orders of many steps, and does not represent the only execution order. specific as figure 1 Shown, the preparation method of described a kind of acoustic wave resonator can comprise:

[0042] S110: providing a porous silicon substrate, depositing Ta on the upper layer of the porous silicon substrate 2 o 5 medium layer.

[0043] Preferably, the porosity of the porous silicon substrate ranges from 25% to 75%. The Ta 2 o 5 The deposition thickness of the dielectric layer ranges from 50nm to 500nm.

[0044] In some other feasible implementation manners, the dielectric layer deposited on the upper layer of the porous silicon substrate is Nb 2 o 5 Materials can also achieve the same technical effect...

Embodiment 1

[0073] A method for preparing an acoustic wave resonator according to this embodiment may include the following steps:

[0074] Step 1: Reference image 3 , deposited Ta on porous silicon substrate 1 with a porosity of 50% 2 o 5 dielectric layer 2, and on Ta 2 o 5 The dielectric layer 2 is planarized so that its surface roughness is less than 1 nm, and the Ta 2 o 5 The deposition thickness of the dielectric layer ranges from 50nm to 500nm.

[0075] Step 2: Reference Figure 4 , select the target area 3 through the photoresist pattern 7 commonly used in semiconductors, for Ta 2 o 5 The dielectric layer 2 performs ion implantation in the target area 3, and the ion implantation type is F ions to form Ta which contains F ions. 2 o 5 Dielectric layer 2, after implanting F ions in the Ta 2 o 5 The content of F atoms in the target region 3 of the dielectric layer is greater than 30 at%.

[0076] Step 3: Reference Figure 5 , provide the piezoelectric layer 8 with the fi...

Embodiment 2

[0081] A method for preparing an acoustic wave resonator in this embodiment can be used to prepare a Lamb wave resonator, and the method can include the following steps:

[0082] Step 1: Deposit Nb on a porous silicon substrate 1 with a porosity of 45% 2 o 5 dielectric layer 2, and the Nb 2 o 5 The dielectric layer 2 is planarized so that its surface roughness is less than 1nm, and the Nb 2 o 5 The deposition thickness of the dielectric layer ranges from 50nm to 500nm.

[0083] Step 2: Select the target area 3 through the photoresist pattern 7 commonly used in semiconductors, and the Nb 2 o 5 The dielectric layer 2 performs ion implantation in the target area 3, and the ion implantation type is F ions to form Nb containing F ions. 2 o 5 Dielectric layer 2, after implanting F ions in the Nb 2 o 5 The content of F atoms in the target region 3 of the dielectric layer is greater than 30 at%.

[0084] Step 3: providing the piezoelectric layer 8 with the first electrode l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
surface roughnessaaaaaaaaaa
porosityaaaaaaaaaa
Login to View More

Abstract

The invention relates to an acoustic wave resonator and a preparation method thereof. The method comprises: providing a porous silicon substrate, depositing Ta on the upper layer of the porous silicon substrate 2 o 5 Dielectric layer; for Ta 2 o 5 The dielectric layer is planarized, and the Ta 2 o 5 Ions are implanted into the target area of ​​the dielectric layer; the piezoelectric layer is provided, and the piezoelectric layer and / or Ta 2 o 5 The dielectric layer is bonded after metallization to form a bonded structure; the piezoelectric layer is thinned to form a piezoelectric thin film layer on the upper layer of the first electrode layer; the bonded structure is heated to form a Ta 2 o 5 The target area of ​​the dielectric layer becomes a cavity; the second electrode layer is deposited on the upper layer of the piezoelectric film layer to complete the preparation of the acoustic wave resonator. The invention provides a simple method for forming a cavity under a piezoelectric film, which is used for the preparation of a film bulk acoustic wave resonator and a Lamb wave resonator, and reduces the preparation cost and process difficulty of the two resonators.

Description

technical field [0001] The invention relates to the field of resonators, in particular to an acoustic wave resonator and a preparation method thereof. Background technique [0002] Acoustic resonators are widely used in the preparation of sensors and communication filters. With the development of communication towards high frequency, the preparation of filters with higher frequency and wider bandwidth will receive extensive attention. The surface acoustic wave filter commonly used in traditional communication, because the increase of its resonant frequency is limited by the low wave speed of surface acoustic wave and the size of the interdigital electrode can not be shortened without limit, so its highest frequency is limited, high frequency surface acoustic wave resonance Device design is difficult and expensive. Therefore, in high-frequency filter applications, film bulk acoustic resonators (FBARs) have received extensive attention. In the film bulk acoustic resonator, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/15H03H9/02H03H9/54
CPCH03H9/02H03H9/15H03H9/54
Inventor 欧欣陈阳黄凯赵晓蒙鄢有泉李忠旭
Owner SHANGHAI NOVEL SI INTEGRATION TECH CO LTD