VCSEL chip and manufacturing method thereof

A chip and semiconductor technology, used in laser parts, electrical components, lasers, etc., can solve the problems of device degradation, increased diffusion, shortened laser service life, etc., and achieve the effect of prolonging service life, long service life and high reliability

Pending Publication Date: 2020-11-06
江苏英弗德电子有限公司
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  • Abstract
  • Description
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Problems solved by technology

Secondly, due to the influence of temperature, the difference in thermal expansion coefficient between the materials of each layer will generate stress inside, and the diffusion between each layer will be intensified, which will degrade the device and shorten the service life of the laser

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  • VCSEL chip and manufacturing method thereof
  • VCSEL chip and manufacturing method thereof
  • VCSEL chip and manufacturing method thereof

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Embodiment Construction

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0036] see Figure 1-11 , the present invention provides a technical solution: a VCSEL chip, including a semiconductor substrate 1, one side surface of the semiconductor substrate 1 is provided with a number of emitting laser cavities 3 uniformly arranged horizontally and vertically, and the emitting laser cavities 3 is provided with an emitting laser unit 4, the emitting laser unit 4 includes an N-type Bragg reflector layer 7, the N-type Bragg reflector layer...

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Abstract

The invention discloses a VCSEL chip and a manufacturing method thereof. The VCSEL chip comprises a semiconductor substrate,the surface of one side of the semiconductor substrate is provided with a plurality of emitting laser cavities which are uniformly arranged in the transverse direction and the vertical direction, anemitting laser unit is arranged in the emitting laser cavity, the emitting laser unit comprises an N-type Bragg reflector layer, the N-type Bragg reflector layer is in contact with the surface of the semiconductor substrate, a P-type Bragg reflector layer is arranged on the surface of one side, back to the semiconductor substrate, of the N-type Bragg reflector layer, and oxide layers cover the outer sides of the P-type Bragg reflector layer and the N-type Bragg reflector layer. The VCSEL chip is stable in structure, high in reliability, good in heat dissipation performance and long in service life.

Description

technical field [0001] The invention relates to the field of semiconductor laser chips, in particular to a VCSEL chip and a manufacturing method thereof. Background technique [0002] VCSEL, the full name is Vertical Cavity Surface Emitting Laser (Vertical Cavity Surface Emitting Laser), which is developed on the basis of gallium arsenide semiconductor materials. It is different from other light sources such as LED (light-emitting diode) and LD (Laser Diode, laser diode). The advantages of output spot, single longitudinal mode output, small threshold current, low price, and easy integration into large-area arrays are widely used in optical communication, optical interconnection, optical storage and other fields. Compared with traditional edge-emitting lasers, VCSEL has an unstable polarization mode output. When the injection current increases continuously from small to large or continuously decreases from large to large, polarization conversion can occur. When changing some ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187H01S5/024
CPCH01S5/02469H01S5/18305H01S5/187
Inventor 陈海宁
Owner 江苏英弗德电子有限公司
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