Silicon nitride etching solution with high selection ratio as well as preparation method and application of silicon nitride etching solution
A technology of etching liquid and silicon nitride, which is applied in chemical instruments and methods, surface etching compositions, semiconductor/solid-state device manufacturing, etc., can solve the problem of poor etching selectivity, short life of etching liquid, and inability to adapt to the increase in the number of stacked structure layers and other issues, to achieve the effect of improving the etching selectivity and improving the life
Active Publication Date: 2020-11-13
SHANGHAI SINYANG SEMICON MATERIALS
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Problems solved by technology
[0005] The technical problem to be solved by the present invention is to overcome defects such as the poor etching selectivity of the existing etchant to silicon oxide and silicon nitride, the short life of the etchant, and the inability to adapt to the increase in the number of layers of the stacked structure, and provide a high selectivity ratio nitrogen Silicone etching solution, its preparation method and application
Method used
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Embodiment 1-5、 comparative example 1-2
[0047] In the following Examples 1-5 and Comparative Examples 1-2, the phosphoric acid used is an aqueous phosphoric acid solution with a mass fraction of 85%. The mass percentages of compound A and compound B (that is, the percentage of the compound in the total mass of the etching solution) are listed in Table 1.
[0048] In the following examples and comparative examples, the etching solution was prepared by mixing compound A or compound B and an aqueous phosphoric acid solution with a mass fraction of 85%, and stirring evenly.
[0049] Table 1
[0050]
[0051]
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The invention discloses a silicon nitride etching solution with a high selection ratio as well as a preparation method and application thereof. The invention specifically discloses an etching solution, which is prepared from the following components in parts by mass: 0.2 to 12.5 parts of a compound shown as a formula A, 74.2 to 85.1 parts of phosphoric acid and 12.9 to 15.6 parts of water. The etching rate selection ratio of the etching solution to silicon oxide and silicon nitride is proper, a silicon nitride film can be selectively removed, the service life of the etching solution is prolonged, and the etching solution can adapt to increase of the number of layers of a laminated structure.
Description
technical field [0001] The invention relates to a silicon nitride etchant with high selectivity ratio, its preparation method and application. Background technique [0002] An oxide film such as a silicon oxide film and a nitride film such as a silicon nitride film are representative insulator films, and in a semiconductor manufacturing process, a silicon oxide film or a silicon nitride film may be used alone or in a laminate In the form of a laminate, one or more layers of film are stacked alternately. In addition, oxide films or nitride films are also used as hard masks for forming conductive patterns such as metal wirings. [0003] In a wet etching process for removing a nitride film, an aqueous phosphoric acid solution is generally used. There are many problems in the single phosphoric acid aqueous solution, such as: the selection ratio of the etching rate of silicon oxide and silicon nitride is improper, and there are many particles and sediments in the solution in a ...
Claims
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IPC IPC(8): C09K13/06H01L21/311
CPCC09K13/06H01L21/31111
Inventor 王溯蒋闯季峥徐锦波
Owner SHANGHAI SINYANG SEMICON MATERIALS