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High-thermal-conductivity microwave TR assembly packaging shell and processing method thereof

A technology for packaging shells and processing methods, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem of unevenness of signal terminals in package shells, improve heat dissipation capability and packaging reliability, Improve the processing technology and prolong the service life

Pending Publication Date: 2020-11-13
HEFEI SHENGDA ELECTRONIC TECH IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the requirements for the overall heat dissipation of the packaging shell of microwave TR components and the unevenness of the signal terminals on the surface of the chassis, so as to improve the heat dissipation capability and packaging reliability of the packaging shell

Method used

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  • High-thermal-conductivity microwave TR assembly packaging shell and processing method thereof
  • High-thermal-conductivity microwave TR assembly packaging shell and processing method thereof
  • High-thermal-conductivity microwave TR assembly packaging shell and processing method thereof

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Embodiment Construction

[0025] A preferred embodiment of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0026] Such as figure 1 A high thermal conductivity microwave TR component package housing shown includes a chassis 1, a transition ring 2 and a cover plate 3, the chassis and cover plate are made of Mu / Cu material, the transition ring is made of Kover material, and the chassis is provided with Several through-holes 4 for soldering radio signal terminals, the through-holes adopt a three-stage stepped cavity structure with a larger diameter from the inside to the outside, including a first-stage step 41, a third-stage step 42 and The second step 43 is used to control the verticality of the signal terminal.

[0027] Mu / Cu material is a material with high thermal conductivity, its thermal conductivity can reach 220W / m*K, and its thermal expansion coefficient is 7.7ppm / ℃, so it has excellent high temperature resistance, radiation resistance and...

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Abstract

The invention provides a high-thermal-conductivity microwave TR assembly packaging shell and a processing method thereof. The packaging shell comprises a chassis, a transition ring and a cover plate,the chassis and the cover plate are made of Mu / Cu materials; the transition ring is made of a Kover material, the chassis is provided with a plurality of through holes for brazing signal terminals, and each through hole adopts a three-step cavity structure of which the diameter is increased from inside to outside, and the three-step cavity structure comprises a first step and a third step for limiting, and a second step for controlling the perpendicularity of the signal terminals. The invention aims at overcoming the defects of manufacturing materials and structures of an existing packaging shell. The Mu / Cu material is adopted on the whole, so that thermal matching of the shell body and the semiconductor chip is ensured, the overall heat conduction of the device is realized, the processingtechnology of the packaging shell is further perfected, the heat dissipation capability and the packaging reliability of the packaging shell are improved, and the service life of the packaging shellis prolonged.

Description

technical field [0001] The invention relates to the technical field of electronic packaging, in particular to a packaging shell of a microwave TR component with high thermal conductivity and a processing method thereof. Background technique [0002] With the integration of electronic components, small size, and high reliability requirements, the density of the assembly inside the package of microwave TR components is getting higher and higher, the power of the device is increasing, and the heat generated during the operation of the device is increasing. Therefore, The device needs to have a good heat dissipation function to ensure that the internal components of the device can work for a long time. [0003] At present, the housing of microwave TR components generally uses Al and Cu as the main materials. Although these materials have relatively high thermal conductivity, their thermal expansion coefficient does not match that of Si-based chips, AsGa chips, GaN cores and othe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/06H01L23/10H01L23/367H01L23/373H01L21/48
CPCH01L23/06H01L23/10H01L21/4803H01L23/3675H01L23/3736
Inventor 方军魏四飞张龙钟永辉
Owner HEFEI SHENGDA ELECTRONIC TECH IND CO LTD
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