Semiconductor laser emitter

A laser transmitter and semiconductor technology, applied in the field of lasers, can solve the problems of large heat generation of the device and unusable laser transmitters, and achieve the effect of eliminating potential barriers, avoiding heat generation, and improving discontinuity.

Pending Publication Date: 2020-11-20
NINGBO ABAX SENSING ELECTRONICS TECH CO LTD
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  • Abstract
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Problems solved by technology

[0006] The object of the present invention is to provide a semiconductor laser emitter for the deficiencies in the above-mentioned prior art, so as to solve the problem that in the related art, the potential barriers at the interface of the heterojunction are relatively high, and these potential barriers will form larger The resistance of the device causes a series of problems caused by high heat generation of the device, etc., and even causes the entire laser transmitter to be unusable

Method used

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  • Semiconductor laser emitter
  • Semiconductor laser emitter
  • Semiconductor laser emitter

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Embodiment Construction

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments.

[0031] figure 1It is an example diagram of a laser emitter disclosed in the prior art, including a first electrode 101, and the material of the first electrode can be gold (Au), germanium (Ge), silver (Ag), palladium (Pd), platinum (Pt), Nickel (Ni), Titanium (Ti), Vanadium (V), Tungsten (W), Chromium (Cr), Aluminum (Al), Copper (Cu), Zinc (Zn), Tin (Sn) and Indium Materials such as (In) are certainly not limited to metal materials, and can also be transparent electrodes formed by metal oxides, etc., and the first electrode is connected to the firs...

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Abstract

The invention provides a semiconductor laser transmitter which is characterized by comprising a first DBR layer, a second DBR layer and a quantum well active region arranged between the first DBR layer and the second DBR layer, and the first electrode is at least partially contained in the first DBR layer. Through the design that at least part of the first electrode is contained in the first DBR layer, a P-type DBR heterojunction interface through which current flows is reduced, so that the DBR series resistance can be reduced, and meanwhile, the current density of the center of the active region can be ensured.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a semiconductor laser emitter. Background technique [0002] Semiconductor-type lasers, due to their excellent controllability and easy implementation of array-type integrated design, are increasingly used in various detection processes, and can be easily realized through the control of voltage and other characteristics. The adjustment of laser parameters is very beneficial to the whole system. Semiconductor laser refers to the laser with semiconductor material as the working substance, also known as semiconductor laser diode (LD), which is a kind of laser developed in the 1960s. There are dozens of working materials for semiconductor lasers, such as gallium arsenide (GaAs), cadmium sulfide (CdS), etc. The excitation methods mainly include electric injection type, optical pump type and high-energy electron beam excitation type. The advantages of semiconductor lasers mainly includ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042H01S5/187
CPCH01S5/187H01S5/04256
Inventor 雷述宇
Owner NINGBO ABAX SENSING ELECTRONICS TECH CO LTD
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