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Active clamping circuit of IGBT

A technology of clamping circuit and push-pull circuit, which is applied in the direction of electrical components, output power conversion devices, etc., can solve the problems of exceeding the IGBT breakdown voltage point and the large peak of the IGBT turn-off voltage, and achieve a small clamping action voltage range Effect

Pending Publication Date: 2020-11-20
JEE AUTOMATION EQUIP SHANGHAI CO LTD
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AI Technical Summary

Problems solved by technology

[0005] During the use of the existing combined active clamping circuit, if the equivalent input capacitance of the IGBT gate is large, the IGBT will be turned off under the second type of short circuit and high current condition, and the IGBT turn-off voltage peak will be too large, which may exceed Breakdown voltage point of Vce of IGBT

Method used

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  • Active clamping circuit of IGBT
  • Active clamping circuit of IGBT

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Embodiment Construction

[0018] Such as figure 2 As shown in the active clamping circuit of the IGBT of the present invention, the gate G of the IGBT is connected with the drive resistor of the push-pull circuit, the collector C and the emitter E of the IGBT are connected to the high level and the ground respectively, and the push-pull The pull circuit is composed of two common base push-pull transistors, and the output end of the push-pull circuit is connected to the gate G of the IGBT through the drive resistor Rg.

[0019] figure 2 Among them, the active clamping circuit includes three transient voltage suppression diodes: unidirectional TVS1, bidirectional TVS2 and bidirectional TVS3; the cathode of TVS1 is connected to the collector C of the IGBT, and the anode of TVS1 is respectively connected to TVS2, One end of TVS3, the other end of TVS2 and TVS3 are respectively connected to the base of the push-pull circuit and the gate G of the IGBT.

[0020] In view of the large gate capacitance of th...

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Abstract

The invention discloses an active clamping circuit of an IGBT. A gate electrode G of the IGBT is connected to output of a push-pull circuit through a driving resistor Rg; the active clamping circuit comprises three transient voltage suppression diodes; and a unidirectional TVS1, a bidirectional TVS2 and a bidirectional TVS3 are included, a cathode of the TVS1 is connected with a collector electrode C of the IGBT, an anode of the TVS1 is connected with one end of the TVS2 and one end of the TVS3, and the other end of the TVS2 and the other end of the TVS3 are connected with a base electrode ofthe push-pull circuit and the gate electrode G of the IGBT. On the basis of a traditional combined active clamping circuit, the circuit structure is slightly adjusted, a TVS tube is additionally arranged, a turn-off voltage peak of the IGBT is reliably protected, and a clamping action voltage range is small.

Description

technical field [0001] The invention relates to IGBT drive protection, in particular to an IGBT active clamping circuit. Background technique [0002] With the increasing popularity of hybrid electric vehicles and electric vehicles, their drive systems are developing towards high voltage and high power, and IGBT modules with higher current and higher voltage are beginning to be used. [0003] In order to allow electric vehicles and hybrid vehicles to have greater top speed and acceleration, more powerful motors and more powerful IGBT modules are required. With the improvement of the voltage platform of the motor controller, there is a risk that the IGBT turn-off voltage peak Vce may exceed the IGBT withstand voltage under bus overvoltage or output overcurrent and short circuit conditions. This is also one of the typical reasons for IGBT overvoltage failure; therefore, it is very necessary to suppress the IGBT turn-off voltage peak Vce. [0004] The existing combined active...

Claims

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Application Information

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IPC IPC(8): H02M1/32
CPCH02M1/32
Inventor 刘蕾郭燕齐范佳伦张林
Owner JEE AUTOMATION EQUIP SHANGHAI CO LTD
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