Sulfonium salt-based monomolecular resin acid producing agent and photoresist composition thereof

A technology of compound and alkyl, applied in the field of single-molecule resin acid generator and its photoresist composition
CN111978228AActive Publication Date: 2020-11-24TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Publication Date
2020-11-24

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Abstract

The invention belongs to the technical field of materials, and particularly relates to a sulfonium salt-based monomolecular resin acid producing agent and a photoresist composition thereof. The invention mainly provides a compound as shown by formula I and a photoresist composition thereof. The compound of the invention has dual functions of acid producing and acid sensing, and not only can be used as an acid producing agent of a photoresist, but also can be used as a main material of the photoresist. The acid producing agent is conducive to realizing regulation on acid diffusion and effectivereduction of edge roughness.
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Description

technical field

[0001] The invention belongs to the technical field of materials, and in particular relates to a sulfonium salt-based monomolecular resin acid generator and a photoresist composition thereof. Background technique

[0002] Photoresist, also known as photoresist, is a kind of etch-resistant thin film material whose solubility changes after energy radiation such as beam, electron beam, ion beam or x-ray, and is widely used in integrated circuits and semiconductor discrete devices. microfabrication. By coating the photoresist on the surface of a semiconductor, conductor or insulator, the part left after exposure and development will protect the bottom layer, and then use an etchant to etch to transfer the required fine pattern from the mask to the substrate. Therefore, photoresist is a key material in device microfabrication technology. With the rapid development of the semiconductor industry, the resolution required by photolithography technology is getting hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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