Laser plasma extreme ultraviolet light source and extreme ultraviolet light generating method

Abstract

The invention relates to a laser plasma extreme ultraviolet light source and an extreme ultraviolet light generation method. The laser plasma extreme ultraviolet light source comprises a vacuum targetchamber, an optical lens module, a droplet target generator and a collecting mirror for collecting extreme ultraviolet light, wherein an optical focus formed by the laser through the optical lens module is located in the vacuum target chamber; the droplet target generator is used for providing droplets for the vacuum target chamber; the moving line of the liquid drop in the vacuum target chamberpasses through the optical focus, and the liquid drop generated by the liquid drop target generator and the laser generate extreme ultraviolet light at the optical focus; the collecting direction of the collecting mirror is perpendicular to the laser incident direction and is not parallel to the moving direction of the liquid drops. The focus of the optical lens module is in a vacuum environment,and therefore damage to other equipment is prevented. Meanwhile, the collection direction of the collector is perpendicular to the laser incident direction, and no hole needs to be formed in the middle of the collection mirror, so that more light can be collected, the collection efficiency is improved, and the conversion efficiency of the light source is further improved.

Description

technical field [0001] The present application relates to the field of laser technology, in particular to a laser plasma extreme ultraviolet light source and an extreme ultraviolet light generation method. Background technique [0002] Photolithography is the most critical technology in the semiconductor industry. Its development has brought about a rapid improvement in the performance of semiconductor devices, and it has provided strong technical support for the development of the entire industry during the evolution of the semiconductor industry for more than half a century. However, with the increasing integration of semiconductor chips, the further miniaturization of very large scale integrated circuits has been limited by the lithography resolution in lithography technology. At present, the extreme ultraviolet lithography technology using extreme ultraviolet radiation with a wavelength of 13.5nm as the exposure light source has been identified as an important means to b...

AI Technical Summary

Problems solved by technology

[0003] During the implementation process, the inventors found that there are at least the following problems in the traditional technology: the problem of low conversion efficiency of the light source in the traditional equipment

Images