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Preparation method of ODS metal film material

A technology of metal thin film and ODS, which is applied in the field of preparation of ODS metal thin film materials, can solve problems such as coarse grains of metal blocks, and achieve the effect of simple preparation process, easy operation and uniform dispersion

Active Publication Date: 2020-12-04
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the traditional complex process of preparing ODS metal, especially the deficiency of ODS nanocrystalline metal technology, and provide an ODS metal thin film material with adjustable oxide doping amount and controllable metal thin film thickness. The preparation method, on the one hand, is expected to effectively overcome the problem of coarse grains of metal bulk prepared by traditional methods, and on the other hand, it is expected to introduce ODS metal nanocrystal thin film materials with controllable oxide doping amount and uniform distribution

Method used

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  • Preparation method of ODS metal film material
  • Preparation method of ODS metal film material
  • Preparation method of ODS metal film material

Examples

Experimental program
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Effect test

Embodiment 1

[0038] Such as figure 1 with figure 2 Shown, a kind of preparation method of ODS metal film material comprises the following steps:

[0039] Step 1: Take Y with an average particle size of about 50nm 2 o 3 The powder is about 2g, put it in a sleeve mold with an inner diameter of 20mm, and press it into a disc with a diameter of 20mm and a thickness of 2mm with a tablet press. The tablet pressing condition is 15MPa and the pressure is maintained for 5min. Furnace heated to 1300 o C, keep warm for 5h, cool down with the furnace, and then get Y 2 o 3 Ceramics;

[0040] Step 2: Surface treatment is carried out on the 304 stainless steel metal target with a thickness of 4mm to remove the surface metal oxides and impurities to obtain the metal target; the metal target is cut into two sets of symmetrical through holes, and the Y 2 o 3 The ceramic sheet is covered with conductive adhesive on the back of the metal target, and two Ys must be added 2 o 3 Composite target of ce...

Embodiment 1 and comparative example 1

[0052] The extended test of embodiment 1 and comparative example 1:

[0053] 1) First examine Y 2 o 3 The effect of the number of ceramic flakes on the oxide concentration in the film:

[0054] According to steps one to four in Example 1, without changing other parameters, only change the Y loaded on the 304 stainless steel target 2 o 3 The number of ceramic sheets, the number is 0, 1, 2, 4 in turn, and the Y content in the corresponding film is measured by inductively coupled plasma spectrometer (ICP) to be about 0, 0.07, 0.15, 1.02 at%, and the Y content in the film With mosaic Y 2 o 3 The increase of the slice increases accordingly.

[0055] 2) Next, examine Y 2 o 3 The effect of the number of ceramic sheets on the film deposition thickness:

[0056] Under the same process conditions and sputtering conditions, the target load Y 2 o 3 The number of ceramic sheets is 0 and 2 in turn, and the thickness of the film is about 2.5 μm and 1.3 μm respectively, indicating ...

Embodiment 2

[0060] Compared with Example 1, the process parameters in Steps 1, 3 and 4 are the same, the difference is that the composite target used in Step 2 is added with four Y 2 o 3 The W target material of the ceramic sheet; the surface morphology analysis and cross-sectional morphology analysis of the obtained film are shown in Figure 4(a), the thickness of the film is about 1 μm, and the Y in the film material 2 o 3 The research on the distribution of is shown in Fig. 4(b), the Y 2 o 3 The particle size is about 60nm.

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Abstract

The invention discloses a preparation method of an ODS metal film material, and namely, a magnetron sputtering method is adopted for the first time, and a metal-based composite target material is sputtered and deposited in an Ar atmosphere by changing the structure of the metal target material, so that the ODS dispersion strengthened metal film material is prepared on a substrate. According to thepreparation method of the ODS metal film material, on one hand, the problems of complex technological processes of methods, such as a traditional powder metallurgy method, and oxide agglomeration, uneven distribution, coarse metal grains and the like in the preparation process can be effectively solved; and on the other hand, the problems that in traditional magnetron sputtering preparation of the ODS metal film, oxide addition is uncontrollable, and complex processes such as double-target simultaneous sputtering are needed can be effectively solved. The preparation of the ODS reinforced metal-based thin film with the nano-scale grain size is realized, and the oxide is uniformly and controllably added to the metal-based material.

Description

technical field [0001] The invention relates to a method for preparing an ODS metal thin film material, in particular to a method for preparing a metal-based nanocrystalline thin film material with uniform and controllable oxide particle content. Background technique [0002] Along with economic development, rapid population growth and long-term consumption of fossil fuels such as coal and oil, many environmental pollution problems have been brought about. For example, 66% of the total global greenhouse gas emissions are caused by the combustion of traditional fossil fuels for power generation. The problem of energy depletion caused by excessive consumption is also becoming more and more serious. Therefore, access to reliable, affordable and sustainable energy is of paramount importance. Since the 1970s, the huge potential of nuclear energy has been gradually discovered and applied by mankind. Nuclear power generation has extremely low carbon emissions, and has high power ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/16C04B35/622C04B35/505B82Y30/00B82Y40/00
CPCC23C14/35C23C14/185C23C14/165C04B35/505C04B35/622B82Y30/00B82Y40/00C04B2235/5454C04B2235/602C04B2235/656C04B2235/6567Y02E30/10
Inventor 赵帮磊王乐张立锋王先平郝汀谢卓明刘长松
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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