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A kind of preparation method of ods metal thin film material

A metal thin film and ODS technology, which is applied in the field of preparation of ODS metal thin film materials, can solve problems such as coarse grains of metal blocks, and achieve the effect of simple and easy operation and uniform dispersion in the preparation process.

Active Publication Date: 2022-08-09
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to overcome the traditional complex process of preparing ODS metal, especially the deficiency of ODS nanocrystalline metal technology, and provide an ODS metal thin film material with adjustable oxide doping amount and controllable metal thin film thickness. The preparation method, on the one hand, is expected to effectively overcome the problem of coarse grains of metal bulk prepared by traditional methods, and on the other hand, it is expected to introduce ODS metal nanocrystal thin film materials with controllable oxide doping amount and uniform distribution

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  • A kind of preparation method of ods metal thin film material
  • A kind of preparation method of ods metal thin film material
  • A kind of preparation method of ods metal thin film material

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Effect test

Embodiment 1

[0038] like figure 1 and figure 2 As shown, a preparation method of an ODS metal thin film material comprises the following steps:

[0039] Step 1: Take Y with an average particle size of about 50nm 2 O 3 The powder is about 2g, placed in a sleeve mold with an inner diameter of 20mm, and pressed into a disc with a diameter of 20mm and a thickness of 2mm by a tablet press. The tableting condition is 15MPa and the pressure is maintained for 5min. Heat in furnace to 1300 o C, hold for 5h, and cool with the furnace to obtain Y 2 O 3 Ceramics;

[0040] Step 2: Perform surface treatment on a 304 stainless steel metal target with a thickness of 4 mm to remove surface metal oxides and impurities to obtain a metal target; cut out two sets of symmetrical through holes from the metal target, 2 O 3 The ceramic sheet is covered with conductive adhesive on the back of the metal target, and two Ys must be added. 2 O 3 Composite target of ceramic sheet;

[0041] Step 3: The single...

Embodiment 1 and comparative example 1

[0052] The extension test of embodiment 1 and comparative example 1:

[0053] 1) First examine Y 2 O 3 The effect of the number of ceramic flakes on the oxide concentration in the film:

[0054] According to steps 1 to 4 in Example 1, other parameters are not changed, only the Y loaded on the 304 stainless steel target is changed. 2 O 3 The number of ceramic sheets is 0, 1, 2, and 4 in sequence. The Y content in the corresponding film is measured by inductively coupled plasma spectrometer (ICP) to be about 0, 0.07, 0.15, 1.02 at%, respectively. The content of Y in the film With Mosaic Y 2 O 3 The increase in slices corresponds to an increase.

[0055] 2) Next, inspect Y 2 O 3 The effect of the number of ceramic sheets on the film deposition thickness:

[0056] Under the same process conditions and sputtering conditions, the target load Y 2 O 3 The number of ceramic sheets is 0 and 2 in turn, and the film thickness is about 2.5 μm and 1.3 μm, respectively, indicating...

Embodiment 2

[0060] Compared with Example 1, the process parameters in steps 1, 3 and 4 are the same, the difference is that the composite target used in step 2 is added with four Y 2 O 3 The W target of the ceramic sheet; the surface morphology analysis and cross-sectional morphology analysis of the obtained film are shown in Figure 4(a), the film thickness is about 1 μm, and the Y in the film material is shown in Figure 4(a). 2 O 3 The distribution study of , is shown in Figure 4(b), Y 2 O 3 The particle size is about 60 nm.

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Abstract

The invention discloses a preparation method of an ODS metal thin film material, that is, the method of magnetron sputtering is used for the first time. The preparation of ODS dispersion-strengthened metal thin film material is realized on the substrate. On the one hand, the ODS metal thin film preparation method of the present invention can effectively overcome the complex process of traditional powder metallurgy and other methods and the problems of oxide agglomeration, uneven distribution, coarse metal grains and the like during the preparation process, and on the other hand, can effectively overcome Oxide addition in ODS thin films prepared by traditional magnetron sputtering is uncontrollable, and complex processes such as simultaneous sputtering of dual targets are required. The preparation of ODS-strengthened metal-based thin films with nanoscale grain size is realized, and the uniform and controllable addition of oxides in metal-based materials is realized.

Description

technical field [0001] The invention relates to a preparation method of an ODS metal thin film material, in particular to a preparation method of a metal-based nanocrystalline thin film material with a uniform and controllable oxide particle content. Background technique [0002] With economic development, rapid population growth and long-term consumption of fossil fuels such as coal and oil, many environmental pollution problems have arisen. For example, 66% of the total global greenhouse gas emissions are caused by traditional fossil fuel combustion for power generation. The problem of energy depletion caused by excessive consumption is also becoming more and more serious. Therefore, access to reliable, affordable and sustainable energy is critical. Since the 1970s, the great potential of nuclear energy has been gradually discovered and applied by mankind. Nuclear power generation has extremely low carbon emissions, high power generation efficiency, and no pollution. Th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/16C04B35/622C04B35/505B82Y30/00B82Y40/00
CPCC23C14/35C23C14/185C23C14/165C04B35/505C04B35/622B82Y30/00B82Y40/00C04B2235/5454C04B2235/602C04B2235/656C04B2235/6567Y02E30/10
Inventor 赵帮磊王乐张立锋王先平郝汀谢卓明刘长松
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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