Laminated film for color solar cell, preparation method and color solar cell
A technology for solar cells and laminated films, applied in the field of solar cells, can solve the problems of long coating deposition time, poor overall uniformity of the silicon nitride film, large gas consumption, etc., achieving easy control of composition and thickness, beautiful appearance, The effect of short film forming time
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Embodiment 1
[0032] A method for preparing a colored solar cell. The silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and a dielectric film is layered and stacked at a temperature of 300°C and a radio frequency power of 6000W. The method specifically includes the following steps:
[0033] (1) Feed SiH with a flow ratio of 1:3 4 and NH 3 Gas, deposit the first silicon nitride film with a thickness of 20nm on one side of the silicon wafer surface;
[0034] (2) N with an incoming flow ratio of 3:1:3 2 O, SiH 4 and NH 3 gas, depositing a first silicon oxynitride film with a thickness of 60 nm on the surface of the first silicon nitride film;
[0035] (3) Feed SiH with a flow ratio of 1:4 4 and NH 3 gas, depositing a second silicon nitride film with a thickness of 30 nm on the surface of the first silicon oxynitride film;
[0036] (4) N with an incoming flow ratio of 4:1:4 2 O, SiH 4 and NH 3 gas, depositing a second silicon oxynitride film with ...
Embodiment 2
[0040] A method for preparing a colored solar cell. The silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and the temperature is 400° C., and the radio frequency power is 8000 W. The dielectric film is layered and stacked, and specifically includes the following steps:
[0041] (1) Feed SiH with a flow ratio of 1:4 4 and NH 3 Gas, depositing the first silicon nitride film with a thickness of 30nm on one side of the silicon wafer surface;
[0042] (2) N with an incoming flow ratio of 4:1:4 2 O, SiH 4 and NH 3 gas, depositing a first silicon oxynitride film with a thickness of 75 nm on the surface of the first silicon nitride film;
[0043] (3) Feed SiH with a flow ratio of 1:5 4 and NH 3 gas, depositing a second silicon nitride film with a thickness of 40 nm on the surface of the first silicon oxynitride film;
[0044] (4) N with an incoming flow ratio of 6:1:6 2 O, SiH 4 and NH 3 gas, depositing a second silicon oxynitride film w...
Embodiment 3
[0048] A method for preparing a colored solar cell. The silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and a dielectric film is layered and stacked at a temperature of 200°C and a radio frequency power of 5000W. The method specifically includes the following steps:
[0049] (1) Feed SiH with a flow ratio of 1:9 4 and NH 3 Gas, deposit the first silicon nitride film with a thickness of 15nm on one side of the silicon wafer surface;
[0050] (2) N with an incoming flow ratio of 1:1:1 2 O, SiH 4 and NH 3 gas, depositing a first silicon oxynitride film with a thickness of 45 nm on the surface of the first silicon nitride film;
[0051] (3) SiH with a flow ratio of 1:9 4 and NH 3 gas, depositing a second silicon nitride film with a thickness of 20 nm on the surface of the first silicon oxynitride film;
[0052] (4) N with an incoming flow ratio of 1:1:1 2 O, SiH 4 and NH 3 gas, depositing a second silicon oxynitride film with a thi...
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