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Laminated film for color solar cell, preparation method and color solar cell

A technology for solar cells and laminated films, applied in the field of solar cells, can solve the problems of long coating deposition time, poor overall uniformity of the silicon nitride film, large gas consumption, etc., achieving easy control of composition and thickness, beautiful appearance, The effect of short film forming time

Active Publication Date: 2020-12-04
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the thickness of the color solar cell dielectric film is thicker than the blue anti-reflection film of ordinary cells, the deposition time of the coating is longer and the gas consumption is larger, resulting in poor overall uniformity of the silicon nitride film layer

Method used

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  • Laminated film for color solar cell, preparation method and color solar cell
  • Laminated film for color solar cell, preparation method and color solar cell
  • Laminated film for color solar cell, preparation method and color solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A method for preparing a colored solar cell. The silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and a dielectric film is layered and stacked at a temperature of 300°C and a radio frequency power of 6000W. The method specifically includes the following steps:

[0033] (1) Feed SiH with a flow ratio of 1:3 4 and NH 3 Gas, deposit the first silicon nitride film with a thickness of 20nm on one side of the silicon wafer surface;

[0034] (2) N with an incoming flow ratio of 3:1:3 2 O, SiH 4 and NH 3 gas, depositing a first silicon oxynitride film with a thickness of 60 nm on the surface of the first silicon nitride film;

[0035] (3) Feed SiH with a flow ratio of 1:4 4 and NH 3 gas, depositing a second silicon nitride film with a thickness of 30 nm on the surface of the first silicon oxynitride film;

[0036] (4) N with an incoming flow ratio of 4:1:4 2 O, SiH 4 and NH 3 gas, depositing a second silicon oxynitride film with ...

Embodiment 2

[0040] A method for preparing a colored solar cell. The silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and the temperature is 400° C., and the radio frequency power is 8000 W. The dielectric film is layered and stacked, and specifically includes the following steps:

[0041] (1) Feed SiH with a flow ratio of 1:4 4 and NH 3 Gas, depositing the first silicon nitride film with a thickness of 30nm on one side of the silicon wafer surface;

[0042] (2) N with an incoming flow ratio of 4:1:4 2 O, SiH 4 and NH 3 gas, depositing a first silicon oxynitride film with a thickness of 75 nm on the surface of the first silicon nitride film;

[0043] (3) Feed SiH with a flow ratio of 1:5 4 and NH 3 gas, depositing a second silicon nitride film with a thickness of 40 nm on the surface of the first silicon oxynitride film;

[0044] (4) N with an incoming flow ratio of 6:1:6 2 O, SiH 4 and NH 3 gas, depositing a second silicon oxynitride film w...

Embodiment 3

[0048] A method for preparing a colored solar cell. The silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and a dielectric film is layered and stacked at a temperature of 200°C and a radio frequency power of 5000W. The method specifically includes the following steps:

[0049] (1) Feed SiH with a flow ratio of 1:9 4 and NH 3 Gas, deposit the first silicon nitride film with a thickness of 15nm on one side of the silicon wafer surface;

[0050] (2) N with an incoming flow ratio of 1:1:1 2 O, SiH 4 and NH 3 gas, depositing a first silicon oxynitride film with a thickness of 45 nm on the surface of the first silicon nitride film;

[0051] (3) SiH with a flow ratio of 1:9 4 and NH 3 gas, depositing a second silicon nitride film with a thickness of 20 nm on the surface of the first silicon oxynitride film;

[0052] (4) N with an incoming flow ratio of 1:1:1 2 O, SiH 4 and NH 3 gas, depositing a second silicon oxynitride film with a thi...

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Abstract

The invention discloses a laminated film for a color solar cell, a preparation method and the color solar cell. The laminated film comprises four layers of dielectric films, namely, a first silicon nitride film, a first silicon oxynitride film, a second silicon nitride film and a second silicon oxynitride film from the bottom to the top in sequence. The preparation method of the laminated film comprises feeding a silicon wafer into a PECVD furnace tube, and laminating and depositing the dielectric films in a layered manner. The color solar cell comprises the laminated film. The components andthickness of each layer in the laminated film are easy to control, the longitudinal components are uniform, and the repeatability is high; good dual effects of reflection reduction and passivation areachieved; and the preparation method is simple, the film forming time is short, the production cost is reduced, and the method is suitable for color solar cells.

Description

technical field [0001] The invention relates to a solar cell, in particular to a laminated film for a colored solar cell, a preparation method and a colored solar cell. Background technique [0002] At present, novel environmentally friendly urban buildings innovatively use colored photovoltaic modules to replace building exterior paint, decorative wall tiles, curtain wall glass or windows, which can not only be used as building materials for protecting and decorating houses, but also have the ability to supply power to the entire building, It has the function of power generation and grid connection, and its simple design also makes the appearance of the building more beautiful and practical. In order to match the color photovoltaic modules used for building decoration, the requirements of the unique color anti-reflection film are different from those of conventional components. Due to the requirement of maximizing the absorption of natural light, conventional components are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168H01L31/1868Y02P70/50
Inventor 罗西佳梅晓东符黎明
Owner CHANGZHOU SHICHUANG ENERGY CO LTD