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Multilayer film for color solar cell, preparation method and color solar cell

A solar cell and laminated film technology, applied in the field of solar cells, can solve the problems of long coating deposition time, poor overall uniformity of the silicon nitride film layer, large gas consumption, etc., and achieve easy control of composition and thickness, beautiful appearance, The effect of short film forming time

Active Publication Date: 2022-05-27
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the thickness of the color solar cell dielectric film is thicker than the blue anti-reflection film of ordinary cells, the deposition time of the coating is longer and the gas consumption is larger, resulting in poor overall uniformity of the silicon nitride film layer

Method used

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  • Multilayer film for color solar cell, preparation method and color solar cell
  • Multilayer film for color solar cell, preparation method and color solar cell
  • Multilayer film for color solar cell, preparation method and color solar cell

Examples

Experimental program
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Effect test

Embodiment 1

[0032] A method for preparing a color solar cell. The silicon wafers after texturing, diffusion and etching are sent into a PECVD furnace tube, and a dielectric film is layered and superimposed at a temperature of 300° C. and a radio frequency power of 6000 W, which specifically includes the following steps:

[0033] (1) SiH with a flow ratio of 1:3 is introduced 4 and NH 3 gas, and deposit a first silicon nitride film with a thickness of 20nm on one side of the silicon wafer surface;

[0034] (2) N with an incoming flow ratio of 3:1:3 2 O, SiH 4 and NH 3 gas, and deposit a first silicon nitride oxide film with a thickness of 60 nm on the surface of the first silicon nitride film;

[0035] (3) SiH with a flow ratio of 1:4 4 and NH 3 gas, and deposit a second silicon nitride film with a thickness of 30 nm on the surface of the first silicon oxynitride film;

[0036] (4) N with an incoming flow ratio of 4:1:4 2 O, SiH 4 and NH 3 gas to deposit a second silicon nitride ...

Embodiment 2

[0040] A method for preparing a color solar cell. The silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and a dielectric film is layered and superimposed at a temperature of 400° C. and a radio frequency power of 8000 W, which specifically includes the following steps:

[0041] (1) SiH with a flow ratio of 1:4 is introduced 4 and NH 3 gas, deposit a first silicon nitride film with a thickness of 30nm on one side of the silicon wafer surface;

[0042] (2) N with an incoming flow ratio of 4:1:4 2 O, SiH 4 and NH 3 gas, deposit a first silicon nitride oxide film with a thickness of 75nm on the surface of the first silicon nitride film;

[0043] (3) SiH with a flow ratio of 1:5 is introduced 4 and NH 3 gas to deposit a second silicon nitride film with a thickness of 40 nm on the surface of the first silicon oxynitride film;

[0044] (4) N with an incoming flow ratio of 6:1:6 2 O, SiH 4 and NH 3 gas to deposit a second silicon nitride...

Embodiment 3

[0048] A method for preparing a color solar cell, the silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and a dielectric film is layered and superimposed at a temperature of 200° C. and a radio frequency power of 5,000 W, which specifically includes the following steps:

[0049] (1) SiH with a flow ratio of 1:9 is introduced 4 and NH 3 gas, and deposit a first silicon nitride film with a thickness of 15nm on one side of the silicon wafer surface;

[0050] (2) N with an incoming flow ratio of 1:1:1 2 O, SiH 4 and NH 3 gas to deposit a first silicon nitride oxide film with a thickness of 45 nm on the surface of the first silicon nitride film;

[0051] (3) SiH with a flow ratio of 1:9 is introduced 4 and NH 3 gas to deposit a second silicon nitride film with a thickness of 20 nm on the surface of the first silicon nitride oxide film;

[0052] (4) N with an incoming flow ratio of 1:1:1 2 O, SiH 4 and NH 3 gas to deposit a second sili...

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Abstract

The invention discloses a laminated film for a color solar cell, a preparation method and a colored solar cell. The laminated film includes four layers of dielectric films, the first silicon nitride film, the first silicon nitride oxide film from bottom to top film, the second silicon nitride film, and the second silicon oxynitride film; the preparation method of the laminated film is to send the silicon wafer into the PECVD furnace tube, and deposit the dielectric film layer by layer; the color solar cell includes the above laminated film membrane. The composition and thickness of each layer in the laminated film of the present invention are easy to control, the longitudinal composition is uniform, and the repeatability is good; it has good dual effects of antireflection and passivation; the preparation method is simple, the film forming time is short, and the production cost is reduced. for colored solar cells.

Description

technical field [0001] The invention relates to a solar cell, in particular to a laminated film for a color solar cell, a preparation method and a color solar cell. Background technique [0002] At present, novel and environmentally friendly urban buildings innovatively use colored photovoltaic modules to replace building peripheral coatings, decorative wall tiles, curtain wall glass or windows, which can not only be used as building materials to protect and decorate houses, but also have the ability to supply power to the whole building, Its simple design also makes the appearance of the building more beautiful and practical. In order to match the color photovoltaic modules used for building decoration, the requirements for unique color anti-reflection films are different from those of conventional modules. Generally, conventional modules are usually blue or black due to the requirement of maximizing the absorption of natural light (the anti-reflection film Thickness 70~90...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18
CPCH01L31/02168H01L31/1868Y02P70/50
Inventor 罗西佳梅晓东符黎明
Owner CHANGZHOU SHICHUANG ENERGY CO LTD