Multilayer film for color solar cell, preparation method and color solar cell
A solar cell and laminated film technology, applied in the field of solar cells, can solve the problems of long coating deposition time, poor overall uniformity of the silicon nitride film layer, large gas consumption, etc., and achieve easy control of composition and thickness, beautiful appearance, The effect of short film forming time
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Embodiment 1
[0032] A method for preparing a color solar cell. The silicon wafers after texturing, diffusion and etching are sent into a PECVD furnace tube, and a dielectric film is layered and superimposed at a temperature of 300° C. and a radio frequency power of 6000 W, which specifically includes the following steps:
[0033] (1) SiH with a flow ratio of 1:3 is introduced 4 and NH 3 gas, and deposit a first silicon nitride film with a thickness of 20nm on one side of the silicon wafer surface;
[0034] (2) N with an incoming flow ratio of 3:1:3 2 O, SiH 4 and NH 3 gas, and deposit a first silicon nitride oxide film with a thickness of 60 nm on the surface of the first silicon nitride film;
[0035] (3) SiH with a flow ratio of 1:4 4 and NH 3 gas, and deposit a second silicon nitride film with a thickness of 30 nm on the surface of the first silicon oxynitride film;
[0036] (4) N with an incoming flow ratio of 4:1:4 2 O, SiH 4 and NH 3 gas to deposit a second silicon nitride ...
Embodiment 2
[0040] A method for preparing a color solar cell. The silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and a dielectric film is layered and superimposed at a temperature of 400° C. and a radio frequency power of 8000 W, which specifically includes the following steps:
[0041] (1) SiH with a flow ratio of 1:4 is introduced 4 and NH 3 gas, deposit a first silicon nitride film with a thickness of 30nm on one side of the silicon wafer surface;
[0042] (2) N with an incoming flow ratio of 4:1:4 2 O, SiH 4 and NH 3 gas, deposit a first silicon nitride oxide film with a thickness of 75nm on the surface of the first silicon nitride film;
[0043] (3) SiH with a flow ratio of 1:5 is introduced 4 and NH 3 gas to deposit a second silicon nitride film with a thickness of 40 nm on the surface of the first silicon oxynitride film;
[0044] (4) N with an incoming flow ratio of 6:1:6 2 O, SiH 4 and NH 3 gas to deposit a second silicon nitride...
Embodiment 3
[0048] A method for preparing a color solar cell, the silicon wafer after texturing, diffusion and etching is sent into a PECVD furnace tube, and a dielectric film is layered and superimposed at a temperature of 200° C. and a radio frequency power of 5,000 W, which specifically includes the following steps:
[0049] (1) SiH with a flow ratio of 1:9 is introduced 4 and NH 3 gas, and deposit a first silicon nitride film with a thickness of 15nm on one side of the silicon wafer surface;
[0050] (2) N with an incoming flow ratio of 1:1:1 2 O, SiH 4 and NH 3 gas to deposit a first silicon nitride oxide film with a thickness of 45 nm on the surface of the first silicon nitride film;
[0051] (3) SiH with a flow ratio of 1:9 is introduced 4 and NH 3 gas to deposit a second silicon nitride film with a thickness of 20 nm on the surface of the first silicon nitride oxide film;
[0052] (4) N with an incoming flow ratio of 1:1:1 2 O, SiH 4 and NH 3 gas to deposit a second sili...
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